N. K. Poletaev < N. K. Polyakov < N. K. Strizhov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000399 (2004-06)		Spectroscopy of Exciton States of InAs Quantum Molecules
000411 (2004-04)		The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000421 (2004-03)		Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000485 (2004)		Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000526 (2003-08)		Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000536 (2003-07)		Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000551 (2003-05)		Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000642 (2003)		Investigation of the formation of InAs QD's in a AlGaAs matrix
000747 (2002-05)		Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000763 (2002-03)		Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000789 (2002)		Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si
000955 (2001)		Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A36 (2000-11)		The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A45 (2000-09-20)		Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000A59 (2000-07)		Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A62 (2000-07)		Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range
000A82 (2000-05-08)		Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000A89 (2000-05)		Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm

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List of associated KwdEn.i

Nombre de documents	Descripteur
27	Experimental study
19	Molecular beam epitaxy
19	Photoluminescence
18	Indium compounds
17	Gallium arsenides
11	Quantum dots
9	III-V semiconductors
9	Indium arsenides
9	Semiconductor quantum dots
8	Arsenic compounds
7	Semiconductor heterojunctions
5	Nanostructured materials
5	Semiconductor materials
4	Binary compounds
4	Crystal growth from vapors
4	Excitons
4	RHEED
4	STM
4	Silicon
4	Theoretical study
3	Epitaxial layers
3	Island structure
3	Semiconductor epitaxial layers
3	Semiconductor growth
3	Surface structure
3	TEM
3	Transmission electron microscopy
2	Arrays
2	Electron diffraction
2	Epitaxy
2	Heteroepitaxy
2	Heterostructures
2	Multilayers
2	Nanostructures
2	Quantum wells
2	Size effect
2	Ternary compounds
1	Aluminium arsenides
1	Annealing
1	Arsenic
1	Atomic force microscopy
1	Band offset
1	Buried nanostructure
1	Characterization
1	Chemical composition
1	Chemical interdiffusion
1	Composite materials
1	Computer aided analysis
1	Computerized instrumentation
1	Crystal growth
1	Density
1	Depth profiles
1	Electron diffraction crystallography
1	Electronic structure
1	Elemental semiconductors
1	Energy gap
1	Fabrication structure relation
1	Free carrier
1	Gallium nitrides
1	Germanium
1	Growth mechanism
1	Growth rate
1	Heterojunctions
1	Indium
1	Indium nitrides
1	Instrumentation
1	Interface structure
1	Kinetics
1	Localization
1	Localized states
1	Luminescence
1	Measuring methods
1	Monolayers
1	Morphology
1	Multilayer
1	Multiple quantum well
1	Nanocrystal
1	Nanotechnology
1	Nonstoichiometry
1	Optical properties
1	Optimization
1	Quantum wires
1	RBS
1	Recording
1	SIMS
1	Semiconductor quantum wells
1	Signal processing
1	Solid solutions
1	Stokes shift
1	Superlattices
1	Surface topography
1	Temperature
1	Temperature dependence

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