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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. D. Stoyanov »
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N. D. Melnikova < N. D. Stoyanov < N. D. Topor  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000781 (2002) Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000892 (2001-07) Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs
000908 (2001-04) Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000D21 (1999-03) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
001162 (1996-08) Noncooled InAsSbP/InAs photodiodes for the spectral range 3-5 μm

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
5Indium compounds
4Gallium arsenides
3Antimony compounds
3Electroluminescence
3Semiconductor heterojunctions
3Solid solutions
2Aluminium compounds
2Energy gap
2III-V semiconductors
2LPE
2Narrow band gap semiconductors
2Photoconductivity
2Photodiodes
1Aluminium antimonides
1Ambient temperature
1Arsenic compounds
1Band bending
1Band energy diagram
1Band structure
1Barrier heights
1Binary compounds
1Capacitance voltage characteristics
1Carrier separation
1Detectivity
1Electric currents
1Electrical conductivity
1Epitaxial layers
1Experiments
1Gallium compounds
1Heating
1Heterojunctions
1Heterostructures
1Hole concentration
1Indium Arsenides
1Infrared detectors
1Infrared radiation
1Interfaces (materials)
1Lattice constants
1Light emitting diodes
1Liquid phase epitaxy
1Long wavelength photodiodes
1Negative resistance
1Ohmic contacts
1Optical bistability
1Phosphorus compounds
1Photoelectrical parameters
1Quantum well lasers
1Quantum wells
1Quantum yield
1Radiation detectors
1Red shift
1Refractive index
1Response functions
1Semiconducting antimony compounds
1Semiconducting indium compounds
1Semiconductor device manufacture
1Semiconductor diodes
1Semiconductor epitaxial layers
1Semiconductor growth
1Spectral response
1Substrates
1Theory
1Thermodynamic equilibrium
1Tunnel effect
1charge injection
1p n junctions

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