N. A. Penin < N. A. Pikhtin < N. A. Pogrebs

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000208 (2008)		Frequency tuning of diode laser radiation by surface acoustic wave
000244 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000261 (2007)		Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000419 (2004-03)		Internal Optical Loss in Semiconductor Lasers
000500 (2003-12)		MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000559 (2003-04)		High-Power 1.7-1.8 μm Single-Mode Laser Diodes
000574 (2003-02)		Low-Threshold-Current 1.2-1.5 μm Laser Diodes Based on AlInGaAs/InP Heterostructures
000575 (2003-02)		Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000688 (2003)		Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000692 (2003)		Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV
000699 (2003)		14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000710 (2002-11)		High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000721 (2002-09)		MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000740 (2002-06)		Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000764 (2002-03)		Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
000866 (2001-11)		MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000887 (2001-08)		Threshold Characteristics of λ = 1.55 μm InGaAsP/InP Heterolasers
000A31 (2000-12)		On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers

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List of associated KwdEn.i

Nombre de documents	Descripteur
26	Gallium arsenides
25	Experimental study
22	Indium compounds
18	Semiconductor lasers
16	Phosphorus compounds
10	Semiconductor heterojunctions
7	Quantum well lasers
6	Diodes
6	III-V semiconductors
6	Laser diodes
6	Theoretical study
5	Binary compounds
5	Gallium compounds
5	Indium arsenides
5	MOCVD
5	VPE
4	Electroluminescence
4	Heterostructures
4	Indium Phosphides
4	Photoluminescence
4	Quaternary compounds
3	Aluminium compounds
3	Gallium Indium Arsenides phosphides Mixed
3	Indium phosphides
3	Injection laser
3	Lattice parameters
3	Optical losses
3	Semiconductor diodes
3	Semiconductor epitaxial layers
3	Semiconductor laser
3	Semiconductor quantum wells
3	Solid solutions
2	Arsenic compounds
2	Auger effect
2	CVD
2	Gallium Arsenides
2	Gallium phosphides
2	Indium Arsenides
2	Manufacturing
2	Optical waveguides
2	Quantum dots
2	Single mode laser
2	Spinodal decomposition
2	Spontaneous emission
2	Stimulated emission
1	Absorption spectra
1	Acoustic surface waves
1	Aluminium arsenides
1	Auger recombination
1	Buried layer
1	Carbon additions
1	Carrier density
1	Continuous phase modulation
1	Crystal doping
1	Crystal growth from vapors
1	Crystal microstructure
1	Current density
1	DH lasers
1	Doping profiles
1	Double heterojunction
1	Emission spectra
1	Excited states
1	Fabrication property relation
1	Fabry-Perot resonators
1	Fermi level
1	Fiber lasers
1	Gain measurement
1	Gallium Arsenides phosphides
1	Gallium Phosphides
1	Gallium alloys
1	Heterojunction
1	Heterojunctions
1	High-power lasers
1	IV characteristic
1	Illumination
1	Indium Arsenides phosphides
1	Infrared laser
1	Inhomogeneity
1	Instrumentation
1	Interband transitions
1	LPE
1	Laser accessories
1	Laser cavity resonators
1	Lasers
1	Luminous intensity current characteristic
1	Matrix elements
1	Microelectronic fabrication
1	Molecular beam epitaxy
1	Nanostructured materials
1	Operating mode
1	Optical amplification
1	Optical pumping
1	Optimization
1	Organometallic compounds
1	Output power
1	Photodetectors
1	Polarized radiation
1	Power
1	Precursor
1	Quantum wells

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