N. A. Majorova < N. A. Maleev < N. A. Minaeva

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 36.
[0-20] [0 - 20][0 - 36][20-35][20-40]

Ident.	Authors (with country if any)	Title
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000387 (2005)		Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000406 (2004-05)		Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000824 (2002)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000884 (2001-09)		1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots
000894 (2001-07)		Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates
000895 (2001-07)		1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000930 (2001)		Thermodynamic analysis of the MBE growth of GaInAsN
000980 (2001)		Large spectral splitting of TE and TM components of QDs in a microcavity
000985 (2001)		InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000A16 (2001)		1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001)		1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
000A18 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A84 (2000-05)		Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range

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List of associated KwdEn.i

Nombre de documents	Descripteur
30	Gallium arsenides
26	Experimental study
18	Indium compounds
17	Semiconductor quantum dots
14	Indium arsenides
13	Semiconductor lasers
12	Molecular beam epitaxy
12	Photoluminescence
11	Quantum dots
8	Quantum well lasers
7	Ternary compounds
6	Binary compounds
6	III-V semiconductors
5	Current density
5	Infrared laser
5	Microcavity
5	Theoretical study
5	Vertical cavity laser
4	Electroluminescence
4	Output power
3	Binary compound
3	Experiments
3	Laser diodes
3	Quantum dot
3	Semiconductor heterojunctions
3	Semiconductor laser arrays
3	Semiconductor materials
3	Semiconductor quantum wells
3	Surface emitting lasers
3	Temperature
3	Temperature effects
3	Threshold current
3	self-assembly
2	Continuous wave lasers
2	Gallium nitrides
2	Ground states
2	Indium nitrides
2	Light emitting devices
2	Light emitting diode
2	Luminous intensity current characteristic
2	Monolayers
2	Optimization
2	Performance evaluation
2	Quantum dot lasers
2	Self organization
2	Semiconducting indium compounds
2	Semiconducting indium gallium arsenide
2	Semiconductor growth
2	Substrates
2	Temperature dependence
2	Ternary compound
2	quantum dot lasers
1	Aluminium arsenides
1	Aluminium compounds
1	Angular resolution
1	Arsenic compounds
1	Bragg reflection
1	Catastrophic optical mirror damage (COMD)
1	Cavity resonator
1	Cladding (coating)
1	Conversion rate
1	Crystal defects
1	Decomposition
1	Distributed Bragg reflection
1	Distributed Bragg reflector lasers
1	Electromagnetic wave diffraction
1	Electronic structure
1	Energy characteristic
1	Energy gap
1	Epitaxial growth
1	Epitaxial layers
1	Etching
1	Excited states
1	Gain control
1	Graded-index waveguides
1	Ground state
1	Heat treatments
1	High power lasers
1	High-power lasers
1	IV characteristic
1	Indium arsenide
1	Injection laser
1	Instrumentation
1	Interface structure
1	Island structure
1	Laser cavity resonators
1	Laser transitions
1	Light emitting diodes
1	MOCVD
1	Manufacturing processes
1	Maximal model gain
1	Measuring methods
1	Microelectronic fabrication
1	Nanostructured materials
1	Nitrogen compounds
1	Operating mode
1	Optical gain
1	Optical losses
1	Optical polarization
1	Optical resolving power

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