N. A. Bernt < N. A. Bert < N. A. Bushe

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000011 (2013)		TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000104 (2010)		On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000421 (2004-03)		Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000539 (2003-07)		Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000A26 (2000-12-01)		Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
000B12 (2000-03)		Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
000B17 (2000-02)		Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000C34 (1999-10-18)		Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C50 (1999-09)		Spontaneously assembling periodic composition-modulated InGaAsP structures
000C62 (1999-08)		Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000C92 (1999-05-10)		InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
000C93 (1999-05)		Spontaneously forming periodic composition-modulated InGaAsP structures
000D12 (1999-03-15)		Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D25 (1999-02)		Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates
000D68 (1999)		Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E06 (1999)		Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status
000E35 (1998-10)		Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots

---

List of associated KwdEn.i

Nombre de documents	Descripteur
31	Experimental study
26	Gallium arsenides
18	Indium compounds
17	Photoluminescence
16	III-V semiconductors
11	Semiconductor quantum dots
10	Molecular beam epitaxy
10	TEM
8	Transmission electron microscopy
7	Indium arsenides
7	Semiconductor epitaxial layers
6	Quantum dots
6	Theoretical study
5	Annealing
5	Semiconductor growth
5	Semiconductor materials
4	Binary compounds
4	Electroluminescence
4	Epitaxial layers
4	Gallium compounds
4	Island structure
4	Nanostructured materials
3	Indium Arsenides
3	Indium antimonides
3	LPE
3	Lattice parameters
3	Optical properties
2	Aluminium compounds
2	Antimony
2	Arrays
2	Arsenic
2	Beryllium additions
2	Dislocations
2	Heterostructures
2	IV characteristic
2	Indium
2	Infrared spectra
2	Inorganic compounds
2	MOVPE method
2	Precipitation
2	Quantum well lasers
2	Semiconductor doping
2	Semiconductor heterojunctions
2	Semiconductor quantum wells
2	Semiconductor-metal boundaries
2	Silicon additions
2	Solid solutions
2	Spinodal decomposition
2	Surface structure
2	Thermal annealing
2	VPE
2	XRD
2	p n junctions
2	self-assembly
1	Aggregate
1	Aluminium nitrides
1	Antimony compounds
1	Antisite defect
1	Atomic clusters
1	Atomic force microscopy
1	Binary compound
1	CVD
1	Chemical composition
1	Chemical interdiffusion
1	Cluster
1	Confinement
1	Convection
1	Crystal doping
1	Crystal growth
1	Crystal growth from vapors
1	Crystal microstructure
1	Crystal perfection
1	Current density
1	DLTS
1	Decomposition
1	Deposition process
1	Displacement field
1	Doped materials
1	Doping profiles
1	Elastic fields
1	Electron density
1	Electron-hole recombination
1	Electronic density of states
1	Electronic structure
1	Energy-level transitions
1	Epitaxy
1	Excitons
1	Film growth
1	Finite element method
1	Form factors
1	Free-standing film
1	Gallium Arsenides
1	Gallium Indium Arsenides phosphides Mixed
1	Gallium Indium Phosphides Mixed
1	Gallium nitrides
1	Gold
1	Ground states
1	Growth from liquid
1	Heterojunction
1	Heterojunctions

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "N. A. Bert" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "N. A. Bert" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    N. A. Bert
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024