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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. V. Stepanov »
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M. V. Shishkov < M. V. Stepanov < M. V. Timofeev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000C41 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000C81 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000D24 (1999-02) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000E28 (1998-11) Scanning electron microscopy of long-wavelength laser structures
000F00 (1998-02) InAsSbP double-heterostructure lasers for the spectral range 2.7-3.0 μm (T=77 K)
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
000F88 (1997-11) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm
001012 (1997-08) InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
001033 (1997-06) Influence of charge carriers on tuning in InAsSb lasers
001159 (1996-08) Using current to tune the wavelength of InAsSb/InAsSbP double-heterostructure lasers
001171 (1996-07) Maximum working temperature of InAsSb/InAsSbP diode lasers
001292 (1995-09) Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12Semiconductor lasers
10Indium compounds
9III-V semiconductors
4Theoretical study
3Carrier density
3Laser tuning
2Current density
2Indium antimonides
2Indium arsenides
2Indium phosphides
2Nonlinear optics
2Semiconductor epitaxial layers
2Semiconductor heterojunctions
1Antimony compounds
1Arsenic compounds
1Auger effect
1Defect states
1Double heterojunction
1Electrical conductivity
1Electron-hole recombination
1Fabrication
1Gallium arsenides
1Gallium compounds
1Heterojunctions
1Impurity states
1Indium Antimonides
1Indium Arsenides
1Indium Phosphides
1Infrared laser
1Injection laser
1Instrumentation
1Interface structure
1Laser frequency stability
1Laser modes
1Laser radiation
1Laser theory
1Narrow band gap semiconductors
1Operation
1Performance characteristic
1Phosphorus compounds
1Polarization
1Quaternary compounds
1Refractive index
1SEM
1Semiconductor device models
1Spectral shift
1Temperature dependence
1Temperature range
1Ternary compounds
1Tuning
1Wide band gap semiconductors
1charge injection

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