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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. Henini »
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M. Hellstrom < M. Henini < M. Herrera  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000511 (2003-10-15) Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband
000605 (2003) Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling
000632 (2003) Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T
000648 (2003) Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
000680 (2003) Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer
000753 (2002-04-15) Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy
000951 (2001) Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
000975 (2001) Magneto-tunnelling spectroscopy for spatial mapping of orbital wavefunctions of the ground and excited electronic states in self-assembled quantum dots
000A67 (2000-06-26) Stark shift in electroluminescence of individual InAs quantum dots
000C94 (1999-05) Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots
000D94 (1999) Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots
000E48 (1998-08-24) Electronic structure of self-assembled InAs quantum dots in GaAs matrix
000E50 (1998-08-15) Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover
000E63 (1998-06-10) Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
11Gallium arsenides
8Semiconductor quantum dots
7III-V semiconductors
7Indium arsenides
7Indium compounds
6Binary compounds
6Semiconductor materials
4Magnetic field effects
4Quantum dots
4Self-assembled layers
3Interface states
3Photoluminescence
3Resonant tunnelling
3Self-assembly
2Double barrier structure
2Electronic structure
2Excited states
2Infrared spectra
2Landau levels
2Light scattering
2Measuring methods
2Quantum wells
2Semiconductor plasma
2Ternary compounds
2Tunnel effect
2Wave functions
1Aluminium arsenides
1Anisotropy
1Anomaly
1CV characteristic
1Charge carrier injection
1Charge carrier recombination
1Charge carrier trapping
1Conduction bands
1Diodes
1Effective mass
1Electroluminescence
1Electron hole plasma
1Electron-electron interactions
1Electron-hole recombination
1Excitation spectrum
1Galvanomagnetic effects
1Ground states
1IV characteristic
1Inelastic scattering
1Interband transitions
1Interfaces
1Light emitting diodes
1Line intensity
1Magnetooscillatory properties
1Oscillations
1Photoexcitation
1Photoionization
1Quantum confined Stark effect
1Resonant tunneling diodes
1Rotating field
1Self assembly
1Semiconductor quantum wells
1Tunneling spectroscopy
1Two-dimensional systems
1Valence bands
1self-assembly

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