Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. Grundmann »
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M. Grehk < M. Grundmann < M. Guina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000816 (2002) Long-wavelength quantum-dot lasers
000886 (2001-08-01) Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
000946 (2001) Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000962 (2001) Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000969 (2001) Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
000F31 (1998) Optical properties of InAlAs quantum dots in an AlGaAs matrix
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F52 (1998) Formation of InAs quantum dots on a silicon (100) surface
001051 (1997-02-24) Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
001085 (1997) Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
001115 (1997) High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001195 (1996-04-15) Nature of optical transitions in self-organized InAs/GaAs quantum dots
001205 (1996-02-12) Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment
001212 (1996-01-15) Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots
001232 (1996) STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques
001267 (1996) An intemediate (1.0-1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
001301 (1995-07-03) Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
001314 (1995-05-15) Ultranarrow Luminescence Lines from Single Quantum Dots

List of associated KwdEn.i

Nombre de
documents
Descripteur
19Experimental study
15Indium arsenides
14Quantum dots
13Gallium arsenides
12Photoluminescence
8Molecular beam epitaxy
7Ternary compounds
5Binary compounds
4Crystal growth from vapors
4Semiconductor materials
3Electroluminescence
3Energy-level transitions
3III-V semiconductors
3Optical pumping
3Semiconductor lasers
3XRD
2Aluminium arsenides
2Anisotropy
2Atomic force microscopy
2Binary compound
2Crystal growth
2Electrical pumping
2Electronic structure
2Heteroepitaxy
2III-V compound
2Indium compounds
2Infrared laser
2Integrated circuit
2Microelectronic fabrication
2Monolayers
2Multilayers
2Optical properties
2Quantum dot
2Semiconductor quantum dots
2Surface structure
2TEM
2Theoretical study
2Transmission electron microscopy
1Cathodoluminescence
1Characterization
1Chemical etching
1Computerized simulation
1Deposition process
1Electron-phonon coupling
1Emission spectra
1Epitaxial layers
1Excitons
1Fabrication structure relation
1Film growth
1Gallium Antimonides
1Gallium Arsenides
1Gallium antimonides
1Growth mechanism
1Heterostructures
1High-resolution methods
1IV characteristic
1Indium Antimonides
1Indium Arsenides
1Indium antimonides
1Infrared radiation
1Intermediate infrared radiation
1Intermediate state
1Intersubband transitions
1Intraband transitions
1Island structure
1Laser cavity resonators
1Laser diodes
1Line widths
1Localized states
1Mid infrared radiation
1Morphology
1Nanometer scale
1Nanostructure
1Nanostructures
1Near infrared radiation
1Optical materials
1Optical phonons
1Optical transition
1Optimization
1Ordered systems
1Output power
1Overlayers
1Piezoelectricity
1Potential barrier
1Quantity ratio
1Quantum efficiency
1Quantum well lasers
1Quantum wells
1Reflection high energy electron diffraction
1Relaxation
1Resonance
1STM
1Scattering
1Self organization
1Self-assembled layers
1Spatial correlation
1Stimulated emission
1Strains
1Temperature dependence
1Temperature range 0000-0013 K

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