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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. Aidaraliev »
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M. Ahola-Tuomi < M. Aidaraliev < M. Ajdaraliev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000528 (2003-08) Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000656 (2003) InAs and InAsSb LEDs with built-in cavities
000730 (2002-08) Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07) Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000860 (2001-12) Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000902 (2001-05) Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000916 (2001-03) Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07) InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
000A94 (2000-04) Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)
000B28 (2000-01) Light Emitting Diodes for the Spectral Range of λ = 3.3-4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C
000C88 (1999-06) Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
000D26 (1999-02) Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range
000F24 (1998) Room temperature InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR
001163 (1996-08) InAsSbP-InAs-InAsSbP laser double-heterostructures with a p-n junction in the active region
001333 (1995-02) Radiative recombination processes in double InAsSbP/InAsSb/InAsSbP heterostructures
001553 (1993) Long-wavelength low-threshold lasers based on III-V compounds

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
11Indium compounds
10Gallium arsenides
7Antimony compounds
6Electroluminescence
6Light emitting diodes
4III-V semiconductors
4Semiconductor lasers
3Indium antimonides
3Indium arsenides
3Phosphorus compounds
3Photodiodes
3Photoluminescence
3Semiconductor heterojunctions
3Solid solutions
3p n heterojunctions
2Arsenic compounds
2Gallium compounds
2Indium phosphides
2LPE
2Laser tuning
2Theoretical study
1Arsenic Antimonides
1Auger recombination
1Binary compound
1Cavity
1Double heterojunction
1Electrical conductivity
1Electron-hole recombination
1Emission
1Emission spectrum
1Energy-level transitions
1Epitaxial layers
1Fiber optic sensors
1Gadolinium
1Gallium Indium Antimonides arsenides Mixed
1Gas detectors
1Heterostructures
1Indium Antimonides arsenides phosphides
1Indium arsenide
1Indium gallium arsenide
1Infrared photodiodes
1Infrared spectra
1Injection laser
1Interface states
1Interface structure
1Lenses
1Light emitting diode
1Luminescence
1Methane
1Methane detection
1Optoelectronic devices
1Quantum well lasers
1Quaternary compounds
1Radiative recombination
1Recombination
1Reviews
1Sandwich structures
1Semiconducting indium compounds
1Semiconductor laser
1Signal to noise ratio
1Spectroscopy
1Spontaneous emission
1Surface recombination
1Temperature control
1Temperature dependence
1Ternary compound

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