IndiumV3, Russie, Analysis, indexItem, Author.i, M. A. Sipovskaya

M. A. Sinitzin < M. A. Sipovskaya < M. A. Slinkin

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.

Ident.	Authors (with country if any)	Title
000731 (2002-08)		Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000C81 (1999-07)		Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
000D29 (1999-02)		High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
000E96 (1998-03)		Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence
001014 (1997-08)		Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
001526 (1993)		Properties of epitaxial indium arsenide doped with rare-earth elements
001559 (1993)		Investigation of the structure of the conduction band of InAsSbP solid solutions
001666 (1992)		Investigation of structure defects in epitaxial indium arsenide films
001825 (1991)		Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
001826 (1991)		Electrical and photoelectric properties of InAsSbP solid solutions
001847 (1991)		Behavior of ytterbium in epitaxial p-type GalnSbAs films
001C11 (1987)

List of associated KwdEn.i

Nombre de documents	Descripteur
11	Experimental study
7	Hall effect
6	Photoconductivity
6	Semiconductor materials
5	Charge carrier concentration
5	Indium compounds
5	Inorganic compound
4	Acceptor center
4	Charge carrier mobility
4	Gallium arsenides
4	III-V semiconductors
4	Temperature
3	Donor center
3	Doping
3	Electrical conductivity
3	Energy gap
3	Gallium compounds
3	Impurity density
3	Low temperature
3	Tellurium
2	Activation energy
2	Aluminium compounds
2	Carrier density
2	Carrier mobility
2	Chemical composition
2	Epitaxial film
2	Gallium Indium Antimonides arsenides Mixed
2	Impurity
2	Impurity level
2	Impurity states
2	Indium Arsenides
2	LPE
2	Magnetoconductivity
2	Solid solution
2	Solid solutions
2	Theoretical study
2	Ytterbium
1	Antimony compounds
1	Band structure
1	Charge carrier scattering
1	Compensation
1	Conduction bands
1	Defect level
1	Defect states
1	Doped materials
1	Doping profiles
1	Effective mass
1	Electric conductivity
1	Electroluminescence
1	Electronic transition
1	Eutectic
1	Gadolinium
1	Galvanomagnetic effects
1	Growth from liquid
1	Hole mobility
1	Illumination
1	Impurities
1	Indium Antimonides arsenides phosphides
1	Indium Nickel Antimonides Mixed
1	Indium antimonides
1	Indium arsenides
1	Indium phosphides
1	Landau levels
1	Light emitting diodes
1	Localized states
1	Magnetic field effects
1	Magnetoresistance
1	Manganese
1	Narrow band gap semiconductors
1	Photovoltaic effect
1	Preparation
1	Quaternary compounds
1	Segregation
1	Selenium
1	Semiconductor doping
1	Semiconductor epitaxial layers
1	Semiconductor growth
1	Semiconductor heterojunctions
1	Shubnikov-de Haas effect
1	Sulfur
1	Support
1	Tellurium additions
1	Temperature dependence
1	Thermomagnetic properties
1	Tin
1	Transition metal Compounds

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « M. A. Sipovskaya »