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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « M. A. Revenko »
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M. A. Reshchikov < M. A. Revenko < M. A. Rykova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000649 (2003) InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
000650 (2003) InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
001009 (1997-08-01) Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films
001112 (1997) Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As4 flux
001183 (1996-05-15) Highly strained InGaAsP films with high critical thicknesses
001229 (1996) Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films
001242 (1996) Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001A21 (1989)

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
5Gallium arsenides
4Gallium phosphides
4III-V semiconductors
4Indium phosphides
3Binary compounds
3Molecular beam epitaxy
3Quaternary compounds
3Thin films
2Crystal growth
2Crystal growth from vapors
2Epitaxial layers
2Epitaxy
2Indium arsenides
2LPE
2Mismatch lattice
2Multilayers
2Semiconductor materials
2Stresses
2Superlattices
2Ternary compounds
2XRD
1Absorption coefficients
1Aluminium arsenides
1Arsenides phosphides
1Chemical composition
1Criticality
1Crystal defect
1Crystal nucleation
1Deformation potential
1Elastic deformation
1Electronic structure
1Film growth
1Gallium Arsenides phosphides
1Gallium compounds
1Growth mechanism
1Heat treatments
1Heteroepitaxy
1Heterojunctions
1Heterostructures
1Indium Arsenides
1Indium Arsenides phosphides
1Indium compounds
1Inorganic compound
1Inorganic compounds
1Interface states
1Liquid phase
1Molecular beam condensation
1Operating mode
1Piezo-optical effects
1Pretreatment
1Process control
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor heterojunctions
1Solid solutions
1Solid source molecular beam epitaxy
1Strains
1Sublattices
1Substrates
1Surface cleaning
1Surface treatments
1Thermodesorption
1Thickness
1Thin film
1Transmission electron microscopy
1Valence bands

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