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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « L. Ya. Karachinsky »
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L. Ya. Karachinskii < L. Ya. Karachinsky < L. Ya. Pech  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000431 (2004-01-05) Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000590 (2003-01) Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000C22 (1999-12) Superradiance in semiconductors

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Gallium arsenides
5Experimental study
5Indium compounds
4III-V semiconductors
4Indium arsenides
3Current density
3Output power
3Semiconductor lasers
3Semiconductor quantum wells
2Buffer layer
2Continuous wave
2Electroluminescence
2High temperature
2Optical properties
2Optical waveguides
2Quantum dots
2Quantum yield
2Ternary compounds
1Aging
1Aluminium arsenides
1Aluminium phosphides
1Ambient temperature
1Beam profiles
1Binary compound
1Binary compounds
1Cooling system
1Crystal growth from vapors
1Damage
1Damaging
1Defect density
1Doped materials
1Durability
1Electroluminescent devices
1Excited states
1Far field
1Filamentation
1Frequency control
1Germanium
1Ground states
1Growth mechanism
1Heat sink
1Heterostructures
1III-V compound
1Interface states
1Irreversible processes
1LPE
1Laser diodes
1Laser materials
1Lifetime
1Light emitting diodes
1Mirrors
1Molecular beam epitaxy
1Multilayers
1Nanostructured materials
1Narrow band gap semiconductors
1Nitrogen compounds
1Optical confinement
1Optical materials
1Optimization method
1Oscillation frequency
1Phase separation
1Phosphorus compounds
1Photodetectors
1Photoluminescence
1Photonic band gap
1Plastics
1Quantum dot
1Quantum dot lasers
1Quantum well lasers
1Quaternary alloys
1Radiative lifetimes
1Refractive index
1Relaxation oscillation
1Reliability
1Self organization
1Self-assembly
1Semiconductor heterojunctions
1Semiconductor quantum dots
1Silicon
1Solar cells
1Spot size
1Strained layer
1Strains
1Superradiance
1Surface emitting laser
1Temperature
1Ternary alloy
1Theoretical study
1Thermal management (packaging)
1Thick film
1Threshold current
1Time resolved spectra
1Transverse mode
1Two-photon spectra
1Vertical cavity laser
1Wide band gap semiconductors
1quantum dot lasers

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