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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « L. M. Dolginov »
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L. M. Chapanova < L. M. Dolginov < L. M. Fedorov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001614 (1992) Stability analysis of quaternary InxGa1-xSbyAs1-y alloys
001841 (1991) Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films
001B73 (1988)
001E36 (1984) Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 AT 300 K)
001E88 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
3Injection laser
3Semiconductor laser
3Semiconductor materials
2Epitaxy
2Gallium Indium Arsenides phosphides Mixed
2Growth from liquid
2III-V compound
2Inorganic compound
1Anodic oxide
1Antimony
1Binary compound
1CV characteristic
1Charge carrier concentration
1Charge carrier scattering
1Chemical composition
1Composition effect
1Contamination
1Crystal growth
1Donor center
1Doping
1Double heterojunction
1Electrical characteristic
1Electrical conductivity
1Epitaxial film
1Gadolinium additions
1Gallium Antimonides
1Gallium Indium Antimonides Mixed
1Gallium Indium Antimonides arsenides
1Gallium Indium Antimonides arsenides Mixed
1Gallium antimonides
1Gallium arsenides
1Growth from solution
1Heterojunction
1Impurity
1Impurity density
1Impurity ionization
1Indium Arsenides
1Indium antimonides
1Indium arsenides
1MIS structure
1Miscibility
1Quaternary compound
1Room temperature
1SIMS
1Solid solution
1Stability
1Temperature
1Theoretical study
1Thermodynamic analysis
1Thin film
1Thin films
1Voltage capacity curve

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