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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « K. S. Zhuravlev »
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K. S. Sukhovey < K. S. Zhuravlev < K. Sakai  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000080 (2011) High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
000284 (2006) Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects : evidence for lateral inter-dot transport
000297 (2006) Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys : magnetic resonance studies
000340 (2005) Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1-xAs matrices
000555 (2003-04-10) Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix
000681 (2003) Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma
001760 (1991) Photoluminescence of (InAs)n(GaAs)m superlattices under stress
001802 (1991) Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Photoluminescence
5Indium arsenides
4Aluminium arsenides
4Gallium arsenides
4Semiconductor materials
3Energy gap
3Excitons
3Experimental study
3Quantum dots
2Charge carrier recombination
2Charge carrier trapping
2Defect density
2Gallium Arsenides
2III-V semiconductors
2Inorganic compound
2Lifetime
2Luminescence decay
2Self-assembled layers
2Ternary compounds
1Acceptor center
1Annealing
1Antimony
1Arsenic compounds
1Binary compounds
1Charge carrier concentration
1Circular polarization
1Codoping
1Complex defect
1Crystal defect density
1Defect formation
1Donor center
1Droplet epitaxy
1Electron emission
1Electron hole pair
1Electron interaction
1Electron phonon interaction
1Energy transfer
1Epitaxial film
1Experimental design
1Germanium
1Growth defect
1Growth mechanism
1Heat treatments
1Heterointerface
1Heterojunctions
1Hole
1III-V compound
1Impurity density
1Indium
1Indium Arsenides
1Indium compounds
1Inorganic compounds
1Interdiffusion
1Interfaces
1Magnetic field effects
1Magnetic resonance
1Matrix element
1Molecular beam epitaxy
1Nanomaterial synthesis
1Nanostructures
1Non radiative recombination
1Period
1Plasma assisted processing
1Point defect
1Polarized radiation
1RHEED
1Radiation polarization
1Residual stress
1Scanning transmission electron microscopy
1Selective excitation
1Shallow level
1Spin polarization
1Superlattice
1Temperature effects
1Theoretical study
1Time resolved spectra
1Vacancy
1Wettability
1Wetting
1g-factor

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