K. D. Chtcherbatchev < K. D. Moiseev < K. D. Mynbaev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 50.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000011 (2013)		TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000023 (2013)		Electronic properties of a single heterojunction in InSb/InAs quantum dot system
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000137 (2009)		Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000150 (2009)		InSb quantum dots and quantum rings on InAs-rich surface
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000525 (2003-08)		Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000633 (2003)		Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000644 (2003)		Interface luminescence and lasing at a type II single broken-gap heterojunction
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000793 (2002)		Raman scattering study of type II GaInAsSb/InAs heterostructures
000796 (2002)		Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000818 (2002)		Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction

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List of associated KwdEn.i

Nombre de documents	Descripteur
38	Experimental study
24	Indium compounds
23	Gallium arsenides
18	III-V semiconductors
17	Indium arsenides
17	Semiconductor heterojunctions
16	LPE
14	Electroluminescence
13	Heterojunctions
13	Solid solutions
12	Indium antimonides
9	Antimony compounds
9	Heterostructures
9	Magnetoresistance
9	Quaternary compounds
9	Semiconductor lasers
8	Gallium antimonides
8	Gallium compounds
7	Binary compounds
7	Energy gap
7	Hall effect
6	Doping
6	Epitaxial layers
6	Photoluminescence
5	Gallium Antimonides arsenides
5	Photoconductivity
5	Quantum dots
4	Aluminium compounds
4	Electron mobility
4	IV characteristic
4	Impurity states
4	Indium Antimonides arsenides
4	Indium Arsenides
4	Inorganic compounds
4	MOVPE method
4	Narrow band gap semiconductors
4	Quantum wells
4	Semiconductor epitaxial layers
4	Semiconductor growth
4	Semiconductor materials
4	Shubnikov-de Haas effect
4	Tellurium additions
3	Atomic force microscopy
3	Band structure
3	Cadmium compounds
3	Carrier density
3	Conduction bands
3	Defect states
3	Electrical conductivity
3	Electron-hole recombination
3	Film growth
3	Localized states
3	Magnetic field effects
3	Molecular beam epitaxy
3	Transmission electron microscopy
3	Tunnel effect
3	VPE
3	p n junctions
2	Acceptor center
2	Arsenic Antimonides
2	Arsenic compounds
2	Carrier mobility
2	Composition effect
2	Electric conductivity
2	Electric currents
2	Electrical properties
2	Experiments
2	Gallium phosphide
2	II-VI semiconductors
2	III-V compound
2	Impurities
2	Impurity density
2	Interface phenomena
2	Interface states
2	Landau levels
2	Magnesium compounds
2	Magnetic moments
2	Nanostructured materials
2	Optical properties
2	P-type conductors
2	Photodiodes
2	Quantum Hall effect
2	Quantum transport
2	Radiative recombination
2	Semiconducting indium compounds
2	Semiconductor quantum wells
2	Surface recombination
2	Temperature dependence
2	Theoretical study
2	Tunneling
2	Zinc additions
1	Acceptor donor pair
1	Activation energy
1	Aluminium antimonides
1	Ambient temperature
1	Angular variation
1	Antimony
1	Antisite defects
1	Application
1	Auger effect

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