Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « J. Graul »
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J. Grannec < J. Graul < J. Grenzer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000496 (2003-12-29) Photoluminescence, depth profile, and lattice instability of hexagonal InN films
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000850 (2002) Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1)
000853 (2002) Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000984 (2001) InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Indium nitrides
6Photoluminescence
5Experimental study
4Binary compounds
4Gallium nitrides
4Hexagonal lattices
4Monocrystals
4Ternary compounds
3Energy gap
3III-V semiconductors
2Absorption edge
2Absorption spectra
2Annealing
2Carrier density
2Doping
2MOMBE method
2Molecular beam epitaxy
2Narrow band gap semiconductors
2Semiconductor materials
1Absorption coefficients
1Band structure
1Buffer layer
1Chemical composition
1Composition effect
1Crystal growth from vapors
1Crystal structure
1Electrical properties
1Electronic structure
1Excitation spectrum
1Fabrication property relation
1Indium compounds
1Layer thickness
1MOCVD
1Nonstoichiometry
1Operating mode
1Optical absorption
1Optical constants
1Optical measurement
1Optical spectrum
1Photoreflectance
1Pretreatment
1Raman spectra
1Reflectance
1Scanning electron microscopy
1Semiconductor epitaxial layers
1Semiconductor growth
1Substrates
1Thin films
1Valence bands
1Wide band gap semiconductors
1XRD

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