Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. V. Sedova »
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I. V. Saunin < I. V. Sedova < I. V. Sereda  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000170 (2009) Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000545 (2003-06) Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000743 (2002-05-20) Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000907 (2001-04) Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
000910 (2001-03-19) Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000978 (2001) MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Molecular beam epitaxy
7Experimental study
6Cadmium compounds
5II-VI semiconductors
5Indium compounds
5Photoluminescence
4Aluminium compounds
4Cadmium selenides
4III-V semiconductors
4Semiconductor heterojunctions
3Heterostructures
3Indium arsenides
3Magnesium compounds
3Semiconductor growth
2Antimony compounds
2Magnesium selenides
2Quantum wells
2Selenium compounds
2Semiconductor epitaxial layers
2Semiconductor lasers
2Semiconductor materials
2Semimagnetic semiconductors
2XRD
2Zinc tellurides
1Active layer
1Aluminium antimonides
1Arsenic compounds
1Band structure
1Chemical composition
1Conduction bands
1Crystal growth from vapors
1Crystal structure
1Electroluminescence
1Electron density
1Electron microprobe analysis
1Electron mobility
1Electron spin polarization
1Energy gap
1Energy-level splitting
1Epitaxial layers
1External fields
1Gallium antimonides
1Gallium arsenides
1Gallium nitride
1Heterojunctions
1III-V compound
1Impurities
1Indium nitride
1Infrared spectra
1Interface states
1Interfaces
1Laser diodes
1Line intensity
1Magnetic field effects
1Manganese additions
1Manganese compounds
1Microlenses
1Multilayers
1Nanostructures
1Optical properties
1Passivation
1Quantity ratio
1Quantum dot lasers
1Quantum yield
1SEM
1Semiconductor quantum wells
1Shubnikov-de Haas effect
1Spintronics
1Stacking fault density
1Strains
1Superlattices
1Surface preparation
1Transmission electron microscopy
1Transport processes
1Two-dimensional electron gas
1Valence bands
1Waveguides
1Zeeman effect
1Zinc Selenides sulfides
1Zinc selenides
1p i n photodiodes

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