IndiumV3, Russie, Analysis, indexItem, Author.i, I. V. Kochnev

I. V. Kityk < I. V. Kochnev < I. V. Kogan

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.

Ident.	Authors (with country if any)	Title
000870 (2001-10)		Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy
000914 (2001-03)		Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
000917 (2001-03)		InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000B17 (2000-02)		Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000B81 (2000)		Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
000C11 (2000)		1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
000D50 (1999)		Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
001114 (1997)		InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001116 (1997)		Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
001150 (1996-10)		Identification of radiative recombination channels in quantum dot structures
001211 (1996-02)		A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
001354 (1995)		Reactive ion etched quantum wire structures for laser applications
001419 (1994-09)		Development and study of the optical properties of InGaAs/GaAs quantum wires

List of associated KwdEn.i

Nombre de documents	Descripteur
11	Experimental study
10	Gallium arsenides
6	Indium arsenides
6	Photoluminescence
4	Binary compounds
4	CVD
4	Indium compounds
4	Quantum dots
4	Semiconductor lasers
4	Ternary compounds
3	Annealing
2	Aluminium compounds
2	Current density
2	DLTS
2	Dislocations
2	Electroluminescence
2	Optical properties
2	Quantum wells
2	Quantum wires
2	Semiconductor materials
2	Threshold current
1	Aluminium compound
1	Arsenic compound
1	Arsenic compounds
1	Characterization
1	Coatings
1	Continuous wave lasers
1	Crystal defects
1	Crystal growth from vapors
1	Current voltage characteristics
1	Defect states
1	Electron capture
1	Electron emission
1	Electron hole pair
1	Epitaxial layers
1	Experimental result
1	Far infrared radiation
1	Gain
1	Gallium compound
1	Heterojunctions
1	III-V semiconductors
1	Indium compound
1	Injection
1	Injection laser
1	Interface structure
1	Intraband transition
1	Island structure
1	Laser mirrors
1	Lasers
1	Localized states
1	MOCVD
1	Measuring methods
1	Microelectronic fabrication
1	Mirrors
1	Multilayers
1	Nanostructured materials
1	Near infrared radiation
1	One-dimensional systems
1	Optical power density
1	Optical waveguides
1	Population inversion
1	Quantum dot
1	Quantum well
1	Reactive ion etching
1	Self-adjusting systems
1	Semiconducting aluminum compounds
1	Semiconducting indium gallium arsenide
1	Semiconductor devices
1	Semiconductor heterojunctions
1	Semiconductor quantum dots
1	Spontaneous emission
1	Strained quantum well
1	TEM
1	Temperature effects
1	Temperature range 65-273 K
1	Theory
1	Thin films
1	Waveform
1	Waveguides
1	p n heterojunctions
1	self-organised criticality

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « I. V. Kochnev »