I. S. Shaplygin < I. S. Tarasov < I. S. Vasil Evskii

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 56.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000208 (2008)		Frequency tuning of diode laser radiation by surface acoustic wave
000244 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000261 (2007)		Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000419 (2004-03)		Internal Optical Loss in Semiconductor Lasers
000500 (2003-12)		MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000520 (2003-09)		Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000524 (2003-08)		Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures
000533 (2003-07-25)		Heterolaser Frequency Tuning under the Action of Ultrasonic Waves
000559 (2003-04)		High-Power 1.7-1.8 μm Single-Mode Laser Diodes
000574 (2003-02)		Low-Threshold-Current 1.2-1.5 μm Laser Diodes Based on AlInGaAs/InP Heterostructures
000575 (2003-02)		Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000662 (2003)		High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000688 (2003)		Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000692 (2003)		Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV
000699 (2003)		14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000710 (2002-11)		High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000721 (2002-09)		MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000740 (2002-06)		Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000764 (2002-03)		Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers

---

List of associated KwdEn.i

Nombre de documents	Descripteur
39	Experimental study
38	Gallium arsenides
36	Indium compounds
23	Semiconductor lasers
18	Phosphorus compounds
14	III-V semiconductors
14	Semiconductor heterojunctions
11	Photoluminescence
9	Theoretical study
8	Gallium compounds
8	Indium Phosphides
8	Indium arsenides
8	Quantum well lasers
8	Semiconductor quantum dots
7	Diodes
7	Gallium Indium Arsenides phosphides Mixed
7	VPE
6	Laser diodes
5	Binary compounds
5	Electroluminescence
5	Heterostructures
5	MOCVD
5	Semiconductor laser
5	Semiconductor quantum wells
4	Aluminium compounds
4	Indium phosphides
4	Injection laser
4	Lattice parameters
4	Molecular beam epitaxy
4	Optical waveguides
4	Quaternary compounds
4	Semiconductor epitaxial layers
4	Solid solutions
3	Arsenic compounds
3	Double heterojunction
3	Gallium phosphides
3	Heterojunction
3	LPE
3	Laser mirrors
3	Optical losses
3	Semiconductor diodes
3	Stimulated emission
2	Aluminium arsenides
2	Auger effect
2	CVD
2	Continuous wave lasers
2	Current density
2	Excitons
2	Gallium Arsenides
2	Indium Arsenides
2	Interface states
2	Laser cavity resonators
2	Manufacturing
2	Nanostructured materials
2	Optimization
2	Output power
2	Quantum dots
2	Quantum wells
2	Semiconductor laser arrays
2	Single mode laser
2	Spinodal decomposition
2	Spontaneous emission
2	Theory
2	Voltage current curve
2	Waveguides
2	self-assembly
1	Absorption spectra
1	Acoustic surface waves
1	Auger recombination
1	Band structure
1	Bandwidth
1	Binary compound
1	Buried layer
1	Buried layers
1	CW laser
1	Calculation methods
1	Carbon additions
1	Carrier density
1	Catastrophic optical mirror damage (COMD)
1	Cladding (coating)
1	Continuous phase modulation
1	Conversion rate
1	Crystal doping
1	Crystal growth from vapors
1	Crystal microstructure
1	Crystal structure
1	Current voltage characteristics
1	DH lasers
1	Doping profiles
1	Dynamic nuclear polarization
1	Electronic structure
1	Emission spectra
1	Energy characteristic
1	Epitaxy
1	Excited states
1	Fabrication property relation
1	Fabry-Perot resonators
1	Fermi level
1	Fiber lasers
1	Flux density

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "I. S. Tarasov" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "I. S. Tarasov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    I. S. Tarasov
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024