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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. P. Soshnikov »
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I. P. Sadikov < I. P. Soshnikov < I. Plavina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000505 (2003-11-03) Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000636 (2003) MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000893 (2001-07) The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000996 (2001) Entropy-driven effects in self-organized formation of quantum dots
000A45 (2000-09-20) Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000A74 (2000-06) Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
000C12 (2000) 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
000C34 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Gallium arsenides
12Experimental study
9Indium arsenides
9Photoluminescence
8Indium compounds
6Molecular beam epitaxy
6Semiconductor quantum dots
5Binary compounds
5III-V semiconductors
5Quantum dots
4Semiconductor lasers
4Semiconductor materials
4TEM
3Gallium compounds
3Island structure
3Nitrogen compounds
3Output power
3Self organization
3Semiconductor superlattices
3Ternary compounds
2Aluminium arsenides
2Binary compound
2CVD
2Fourier transformation
2Heteroepitaxy
2High temperature
2Interface states
2Nanostructured materials
2Optical waveguides
2Quantum dot
2Semiconductor heterojunctions
2Silicon
2Solid solutions
2Threshold current
2Transmission electron microscopy
2Ultrathin films
2Wide band gap semiconductors
1Aging
1Aluminium phosphides
1Ambient temperature
1Argon
1Arsenic
1Beam profiles
1Buffer layer
1Catastrophic optical mirror damage (COMD)
1Cladding (coating)
1Computer software
1Computerized simulation
1Continuous wave
1Continuous wave lasers
1Conversion rate
1Cooling system
1Crystal defects
1Crystal microstructure
1Current density
1Damaging
1Doped materials
1Durability
1Energy characteristic
1Entropy
1Excitons
1Far field
1Filamentation
1Free energy
1Frequency control
1Graded-index waveguides
1Heat sink
1Heterostructures
1Images
1Inclusions
1Indium
1Infrared laser
1Injection laser
1Interface structure
1Ion beam applications
1Ion beams
1Laser materials
1Lasers
1Lattice parameters
1Lifetime
1Light emitting diodes
1Localized states
1Measuring methods
1Microstructure
1Mirrors
1Monolayers
1Multilayers
1Nanometer scale
1Nanostructures
1Narrow band gap semiconductors
1Optical confinement
1Optical materials
1Optical properties
1Optical resolving power
1Optimization method
1Optoelectronic device
1Oscillation frequency
1Phase separation
1Phosphorus compounds
1Photonic band gap

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