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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. M. Tiginyanu »
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I. M. Subbotin < I. M. Tiginyanu < I. Munro  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001761 (1991) Photoelectrical properties of Zn3InGaS6 single crystals
001770 (1991) On the nature of radiation defects responsible for fermi level pinning effect in InP
001915 (1990) Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001966 (1989) Investigation of traps in InP:Zn single crystals implanted by phosphorus ions
001980 (1989) Change of the optical properties of CdS single crystals upon high dose indium and gallium implantation
001993 (1989)
001A60 (1988) Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta
001A71 (1988) Electrical properties of InPe:Fe single crystals implanted by phosphorus ions
001B17 (1988)
001B29 (1988)
001C49 (1987)
001D05 (1986) Luminescence and photoconductivity caused by antisite defects in CdIn2S4 single crystals
001D58 (1986)
001E09 (1985)
001E10 (1985)
001E76 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
13Inorganic compound
12Semiconductor materials
10Indium Phosphides
8Single crystal
5Ion implantation
5Iron
5Photoluminescence
5Transition metal Compounds
4Annealing
4Impurity
4Irradiation
4Photoconductivity
3Charge carrier trapping
3Optical scattering
2Activation energy
2Antisite defect
2Crystal defect level
2Disorder
2Energy gap
2Free carrier
2Gallium Arsenides
2Heat treatment
2Impurity cluster
2Laser beam
2Photodiode
2Photosensitivity
2Schottky barrier
2Temperature
1Absorption edge
1Acceptor center
1Ageing
1Cadmium Gallium Selenides Mixed
1Cadmium Indium Selenides Mixed
1Cadmium Indium Sulfides Mixed
1Cadmium Sulfides
1Cathodoluminescence
1Cations
1Charge carrier recombination
1Chemical composition
1Chromium
1Crystal defect
1Crystal defect density
1Deep level transient spectrometry
1Defect
1Defect level
1Donor center
1Doping
1Doublet state
1Electrical characteristic
1Electrical conductivity
1Electron beam
1Electronic transition
1Electrons
1Epitaxial film
1Exciton
1Exciton phonon interaction
1Fermi level
1Gallium
1Gallium Phosphides
1Gamma radiation
1Hall effect
1Heterogeneity
1High temperature
1III-V compound
1Impurity density
1Impurity ionization
1Indium
1Indium Zinc Sulfides Mixed
1Influence
1Infrared spectrum
1Laser
1Localized state
1Low temperature
1Magnesium
1Microelectronic fabrication
1Microstructure
1Non stoichiometric composition
1Optical characteristic
1Optical properties
1Optical reflection
1Optical transition
1P n junction
1P type conductivity
1Phosphorus
1Point defect
1Potential
1Preparation
1Relaxation time
1Solar cell
1Surface electron state
1Surface recombination
1Theoretical study
1Thermal stability
1Thermal variation
1Trap
1Unsteady state
1Visible absorption
1Voltage capacity curve
1Voltage current curve

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