Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. L. Krestnikov »
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I. L. Kasatkin < I. L. Krestnikov < I. L. Likholit  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000374 (2005) High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000505 (2003-11-03) Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000895 (2001-07) 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000917 (2001-03) InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000980 (2001) Large spectral splitting of TE and TM components of QDs in a microcavity
000985 (2001) InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000A16 (2001) 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001) 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000B00 (2000-04) Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
000B48 (2000) Quantum dots formed by ultrathin insertions in wide-gap matrices
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C11 (2000) 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
000C61 (1999-08-30) Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
000C83 (1999-06-28) Surface-mode lasing from stacked InGaN insertions in a GaN matrix
000C92 (1999-05-10) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

List of associated KwdEn.i

Nombre de
documents
Descripteur
21Experimental study
21Gallium arsenides
17Photoluminescence
14Indium compounds
12Indium arsenides
11III-V semiconductors
10Quantum dots
8Binary compounds
8Semiconductor lasers
8Ternary compounds
6Binary compound
6Gallium compounds
6Quantum dot
6Semiconductor quantum dots
5Microcavity
5Molecular beam epitaxy
5Wide band gap semiconductors
4Aluminium compounds
4Electroluminescence
4Microelectronic fabrication
4Optical properties
4Self organization
4Semiconductor materials
4Threshold current
4Transmission electron microscopy
3CVD
3Current density
3Excitons
3III-V compound
3Integrated circuit
3Nanostructured materials
3Quantum well lasers
3Semiconductor growth
3Semiconductor heterojunctions
3Ternary compound
3Theoretical study
3Vertical cavity laser
2Distributed Bragg reflector lasers
2Gallium Arsenides
2Gallium nitrides
2Ground states
2Heterojunctions
2High temperature
2Indium Arsenides
2Indium nitrides
2Infrared laser
2Interface states
2Island structure
2Light emitting devices
2Light emitting diode
2Light emitting diodes
2Measuring methods
2Optoelectronic devices
2Performance evaluation
2Quantum dot lasers
2Reliability
2Semiconductor quantum wells
2Semiconductor superlattices
2Surface emitting laser
2Surface emitting lasers
2Temperature effects
2self-assembly
1Aging
1Aluminium arsenides
1Ambient temperature
1Angular resolution
1Annealing
1Antimony compounds
1Arsenic compounds
1Atomic force microscopy
1Buffer layer
1Cadmium selenides
1Capacitance
1Cathodoluminescence
1Cavity resonator
1Charge carriers
1Chemical etching
1Coatings
1Continuous wave
1Cooling system
1Crystal defects
1Crystal microstructure
1Crystal morphology
1Damaging
1Deposition process
1Diffusion
1Dislocations
1Distributed Bragg reflection
1Doped materials
1Durability
1Electromagnetic wave diffraction
1Electron state
1Electronic density of states
1Energy level
1Excitation spectrum
1Filamentation
1Frequency control
1Gain
1Gallium Antimonides
1Heat sink

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