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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. K. Kamilov »
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I. K. Igumenov < I. K. Kamilov < I. K. Korolev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000179 (2009) About deep impurity centers in InAs
000519 (2003-09) Phenomena of the Collective Behavior of Autosolitons in a Dissipative Structure in InSb
000617 (2003) Preparation and properties of Metal/CuInSe2 diode structures
000658 (2003) Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs
000770 (2002-02) Distribution of Charge Carriers in Dissipative Semiconductor Structures
000852 (2002) Autosolitons in electron-hole plasma in InSb under hydrostatic pressure
000B01 (2000-04) Fission of Longitudinal Autosolitons in InSb in a Magnetic Field
000D38 (1999-01) Quasi-gapless semiconductor: p-type indium arsenide
000E22 (1998-12) Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625-628 (June 1988)]
000E68 (1998-06) Autosolitons in InSb in a magnetic field
000F71 (1998) Autosolitons in InSb in a magnetic field
000F72 (1998) Autosolitons in InSb in a low magnetic field
001264 (1996) Autosolitons in electron-hole plasma of InSb heated by electric pulses
001297 (1995-08) Metal-insulator electronic phase transition in heavily doped compensated semiconductors

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
9Solitons
6III-V semiconductors
6Indium antimonides
6Indium compounds
4Electrical conductivity
4Magnetic field effects
4Oscillations
4Semiconductor materials
4Theoretical study
3Antimony compounds
3Binary compounds
3Carrier density
3Electric field effects
3Hall effect
3Hydrostatic pressure
3Pressure effects
2Charge carriers
2Deep level
2Defect states
2Electron density
2Electron hole plasma
2Electron-hole drops
2Energy gap
2Galvanomagnetic effects
2Indium arsenides
1Acceptor center
1Aging
1Bifurcation
1Carrier mobility
1Chaos
1Conduction bands
1Copper selenides
1Deep energy levels
1Deep impurities
1Diodes
1Donor center
1Doped materials
1Electric conductivity
1Electric currents
1Electric pulse
1Electrical resistivity
1Electronic density of states
1Energy-level density
1Formates
1Frequency dependence
1Gallium arsenides
1Germanium
1Heat treatments
1Heavily doped semiconductors
1III-VI semiconductors
1IV characteristic
1Impurity states
1Indium selenides
1Interfacial layer
1Joule-Thomson effect
1Localized states
1Low field
1Magnetooscillatory properties
1Metal-semiconductor contacts
1N-type conductors
1Nernst Ettingshausen effect
1Oxide layer
1Photovoltaic effects
1Rectification
1Resonant states
1Solid-state plasma
1Spectral response
1Tellurium
1Ternary compounds
1Threshold voltage
1Valence bands

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