Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. I. Novikov »
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I. I. Marahovka < I. I. Novikov < I. I. Olikov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005) QD lasers : Physics and applications
000372 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005) High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000514 (2003-10) Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000590 (2003-01) Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
000740 (2002-06) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000B07 (2000-03) Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model
000C22 (1999-12) Superradiance in semiconductors
000C82 (1999-07) Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
15Gallium arsenides
9Experimental study
8Indium arsenides
7III-V semiconductors
7Indium compounds
7Ternary compounds
6Current density
6Quantum dots
6Semiconductor lasers
6Threshold current
4Binary compounds
4High temperature
4Output power
4Quantum dot lasers
3Continuous wave
3Laser diodes
3Molecular beam epitaxy
3Optical waveguides
3Quantum yield
3Semiconductor quantum wells
3Superradiance
3Theoretical study
2Ambient temperature
2Buffer layer
2Crystal growth from vapors
2Electroluminescence
2Gallium Arsenides
2Indium Arsenides
2Inorganic compounds
2Nanostructured materials
2Optical confinement
2Optical properties
2Quantum well lasers
2Reliability
2Semiconductor heterojunctions
2Semiconductor materials
2Strains
2Temperature
2Vertical cavity laser
2quantum dot lasers
1Aging
1Aluminium arsenides
1Aluminium compounds
1Aluminium phosphides
1Beam profiles
1Binary compound
1Bragg reflection
1CVD
1Cooling system
1Damage
1Damaging
1Defect density
1Density
1Doped materials
1Durability
1Electroluminescent devices
1Excited states
1Far field
1Filamentation
1Frequency control
1Germanium
1Growth mechanism
1Growth rate
1Heat sink
1Heterostructures
1III-V compound
1IV characteristic
1Irreversible processes
1LPE
1Laser materials
1Lifetime
1Light emitting diodes
1Line broadening
1Line widths
1Mirrors
1Monolayers
1Multilayers
1Narrow band gap semiconductors
1Nitrogen compounds
1Non radiative recombination
1Optical losses
1Optical materials
1Optimization method
1Oscillation frequency
1Performance
1Phase separation
1Phosphorus additions
1Phosphorus compounds
1Photodetectors
1Photoluminescence
1Photonic band gap
1Plastics
1Quantum dot
1Quantum wells
1Quaternary alloys
1Refractive index
1Relaxation oscillation
1Self organization
1Self-assembly
1Semiconductor epitaxial layers

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