Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. G. Savel Ev »
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I. G. Per Kov < I. G. Savel Ev < I. G. Savelev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000459 (2004) Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
000814 (2002) Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP
000976 (2001) Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid
000D83 (1999) Interaction of low-density 2DEG with acoustic phonons
000F20 (1998) Spin-orbit splitting and weak antilocalization in an asymmetric In0.53Ga0.47As/InP quantum well
001186 (1996-05) Quenching of persistent photoconductivity by electrical pulses
001193 (1996-05) Effect of a strong electric field on the properties of a nonequilibrium, two-dimensional electron gas in nonideal heterostructures
001226 (1996) Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
001308 (1995-07) Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect
001358 (1995) Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces
001452 (1994-02) Relationship between growth conditions and heterojunction quality in InP/In1-xGaxAs selectively doped heterostructures grown by liquid-phase epitaxy
001453 (1994-02) Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures
001462 (1994-01) Shubnikov-de Hass oscillations in a nonuniform 2D electron gas
001474 (1994) Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001569 (1993) Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)
001660 (1992) Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy
001986 (1989)
001B20 (1988)
001B22 (1988)
001C36 (1987)

List of associated KwdEn.i

Nombre de
documents
Descripteur
17Experimental study
15Indium arsenides
14Gallium arsenides
14Indium phosphides
13Electron gas
11Semiconductor materials
9Heterostructures
9Ternary compounds
8Binary compounds
6Heterojunction
6Indium Phosphides
5Gallium Indium Arsenides Mixed
5Hall effect
5Inorganic compound
5Magnetoresistance
5Two-dimensional systems
4Charge carrier concentration
4Doped materials
4Galvanomagnetic effect
4Two-dimensional electron gas
3Aluminium Gallium Arsenides Mixed
3Charge carrier mobility
3Crystal growth
3Doping
3Epitaxy
3Gallium Arsenides
3Magnetic field effects
3Magnetoconductivity
3Photoconductivity
3Quantum Hall effect
3Temperature dependence
3Two dimensional model
2Charge carrier scattering
2Defect
2Electric conductivity
2Electrical conductivity
2Gallium Indium Phosphides Mixed
2Growth from liquid
2Interface
2Liquid phase epitaxy
2Modulation doping
2Preparation
2Quantum wires
2Shubnikov de Haas effect
2Shubnikov-de Haas effect
2Theoretical study
2Thin film
1Acoustic measurements
1Acoustic surface waves
1Activation energy
1Aluminium arsenides
1Characterization
1Concentration ratio
1Coulomb scattering
1Damping
1Electron mobility
1Electron temperature
1Electron-phonon interactions
1Energy-level density
1Etching
1Exchange interactions
1Film resistor
1Films
1Fluctuations
1Gallium Indium Arsenides phosphides Mixed
1Hall conductivity
1Heteroepitaxy
1Heterogeneity
1Heterojunctions
1III-V semiconductors
1IV characteristic
1Impurity
1Impurity density
1Inorganic compounds
1L-S coupling
1LPE
1Landau level
1Landau levels
1Lanthanide
1Liquid state
1Localized electron
1MHz range
1Magnetooscillatory properties
1Mobility
1Molecular beam condensation
1N type conductivity
1Negative magnetoconductivity
1Numerical solution
1P type conductivity
1Parallel connection
1Period
1Phase transitions
1Photography
1Quantum magnetic field
1Quantum transport
1Quenching
1Relaxation time
1Resistor
1Samarium
1Screening

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