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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. G. Malkina »
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I. G. Lang < I. G. Malkina < I. G. Medvedev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000D18 (1999-03) Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
000D67 (1999) Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots
000E31 (1998-10) Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
000F35 (1998) Low temperature transport properties of InAs/GaAs structures with quantum dots
001006 (1997-09) Photoelectric properties of GaAs/InAs heterostructures with quantum dots
001036 (1997-05-05) Transport anisotropy in spontaneously ordered GaInP2 alloys
001090 (1997) Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
001144 (1996-10-10) Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells
001199 (1996-03-25) Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
001250 (1996) Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures
001273 (1995-12) Optical phonons in spontaneously ordered InGaP solid solutions
001295 (1995-08-25) Strong polarization of the photoluminescence of InxGa1-xP grown on (110) GaAs
001323 (1995-04) Superluminescence polarization and optical-loss anisotropy in an InGaP/GaAs/InGaP waveguide structure
001564 (1993) InGaP/GaAs/InGaAs quantum well lasers prepared by atmospheric pressure metalorganic chemical vapour deposition
001667 (1992) Intersubband absorption of infrared radiation in stressed quantum-well InxGa1-xAs-GaAs structures
001894 (1990) Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
8Photoluminescence
7Gallium arsenides
4Gallium Arsenides
4Indium compounds
4Indium phosphides
4Semiconductor materials
3Binary compounds
3Gallium Indium Arsenides Mixed
3Gallium phosphides
3III-V semiconductors
3Indium arsenides
3Magnetoresistance
3Semiconductor quantum dots
3Theoretical study
2Hall effect
2Inorganic compound
2Optical polarization
2Photoconductivity
2Polarization
2Quantum well
2Quantum wells
2Semiconductor epitaxial layers
2Shubnikov-de Haas effect
2Superlattices
2Temperature dependence
2Ternary compounds
2Waveguides
1Angular distribution
1Anisotropy
1Atmospheric pressure
1Beam profiles
1Binary compound
1Carrier lifetime
1Carrier mobility
1Charge carrier trapping
1Chemical vapor deposition
1Coupled waveguide
1Domain structure
1Doped materials
1Electric conductivity
1Electrical conductivity
1Electron localization
1Electron traps
1Electronic density of states
1Electronic transition
1Energy losses
1Epitaxial layers
1Gallium Indium Phosphides Mixed
1Gallium compounds
1III-V compound
1Inclusions
1Indium Arsenides
1Infrared absorption
1Integrated circuit
1Interband transition
1Interface states
1Laser
1Low temperature
1Magnetooscillatory properties
1Microelectronic fabrication
1Microstructure
1Minority carriers
1Morphology
1Optical anisotropy
1Photoelectric effect
1Polarized radiation
1Quantum Hall effect
1Quantum dot
1Quantum dots
1Quantum size effect
1Raman spectra
1Random potential
1Scattering
1Selection rules
1Semiconductor growth
1Semiconductor lasers
1Semiconductor quantum wells
1Shubnikov de Haas effect
1Size effect
1Solid solutions
1Stimulated emission
1Strained quantum well
1Temperature effect
1Ternary semiconductors
1Transport processes
1Transport properties
1Tunnel effect
1Two-dimensional electron gas
1VPE
1Visible radiation
1Wave propagation
1Weak localization
1XRD
1p n junctions

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