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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. D. Zalevskii »
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I. D. Yaroshetsky < I. D. Zalevskii < I. D. Zalevsky  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000721 (2002-09) MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
4Semiconductor lasers
3Aluminium arsenides
3Binary compounds
3Heterostructures
3Indium arsenides
3MOCVD
3Ternary compounds
2Laser diodes
2Output power
2Quantum well lasers
2Strained quantum well
2p n junctions
1AES
1Aluminium compounds
1Beam profiles
1Divergences
1Doping profiles
1Emission spectra
1Far field
1High-power lasers
1IV characteristic
1Indium compounds
1Infrared laser
1Luminous intensity current characteristic
1Optical losses
1Semiconductor heterojunctions
1Single mode laser

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HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "I. D. Zalevskii" \
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