Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. A. Karpovich »
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I. A. Efimenko < I. A. Karpovich < I. A. Kirovskaya  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000410 (2004-04) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000750 (2002-05) Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
000797 (2002) Photoelectric spectroscopy of InAs/GaAs quantum dot structures in a semiconductor/electrolyte system
000901 (2001-05) Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
000927 (2001-01) Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
000970 (2001) Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy
000E46 (1998-09) Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
001006 (1997-09) Photoelectric properties of GaAs/InAs heterostructures with quantum dots
001152 (1996-10) Diagnostics of heterostructures with quantum wells by the method of capacitive photovoltage spectroscopy
001461 (1994-01) Use of quantum-well structures to study defect formation at semiconductor surfaces
001532 (1993) Polarization dependence of the interband optical absorption by an InGaAs quantum well in GaAs
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
001672 (1992) Influence of sulfiding on the state of the surface and photoelectric properties of InP and GaAs
001689 (1992) Electronic state of the surface of InP modified by treatment in sulfur vapor
001691 (1992) Electron state of a surface of InP modified by treatment in sulfur vapor
001894 (1990) Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures
001C39 (1987)

List of associated KwdEn.i

Nombre de
documents
Descripteur
15Experimental study
10Gallium arsenides
7Semiconductor materials
6Indium compounds
6Photoluminescence
5Inorganic compound
5Surface electron state
4Indium Phosphides
4Indium arsenides
4Photovoltaic effects
4Semiconductor quantum dots
3Gallium Arsenides
3III-V semiconductors
3MIS structure
3Passivation
3Photoconductivity
3Photoelectric effect
3Surface treatment
3Voltage capacity curve
2Band bending
2Binary compounds
2Controlled atmosphere
2Defect states
2Gallium Indium Arsenides Mixed
2Indium Sulfides
2Interface states
2MOCVD
2Quantum dots
2Quantum well
2Quantum wells
2Semiconductor heterojunctions
2Semiconductor quantum wells
2Semiconductor-electrolyte boundaries
2Theoretical study
2Thermal annealing
2VPE
1Absorption spectra
1Anodization
1Argon ions
1Arsenic compounds
1Atomic force microscopy
1Band structure
1Bismuth
1Charge carrier mobility
1Charge carrier recombination
1Charge carrier trapping
1Cladding
1Crystal defects
1Crystal growth from vapors
1Curvature
1Density of states
1Diffusion
1Diodes
1Drift velocity
1Electric field
1Electric field effects
1Electrochemical method
1Electron hole pair
1Electron-hole recombination
1Electronic density of states
1Electronic structure
1Enhancement layer
1Excited states
1Fermi level
1Glow discharges
1Gold
1Ground states
1Heterostructures
1Hydrogen
1IV characteristic
1Impurities
1Incidence angle
1Indium Oxides
1Infrared spectra
1Interband transitions
1MOVPE method
1Measuring methods
1Morphology
1N type conductivity
1Nanostructures
1Ohmic contacts
1Optical fibers
1Optical windows
1Overlayers
1Oxidation
1Palladium
1Photoelectron emission
1Photoelectron spectroscopy
1Photoelectronic properties
1Physical radiation effects
1Plasma applications
1Polarized beams
1Process control
1Property composition relationship
1Property structure relationship
1Quantum size effect
1Selective etching
1Semiconductor epitaxial layers
1Semiconductor growth
1Sensors

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