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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « I. A. Andreev »
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I. A. Akimov < I. A. Andreev < I. A. Avrutskii  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000105 (2010) Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000530 (2003-08) High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000781 (2002) Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000908 (2001-04) Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
000D27 (1999-02) Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary
000D92 (1999) Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy
001030 (1997-06) Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures
001325 (1995-04) GaInAsSb/InAs heterojunctions
001850 (1991) Avalanche multiplication and ionization coefficients of GalnAsSb

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
6Photodiodes
5LPE
4Indium compounds
3III-V semiconductors
3Semiconductor heterojunctions
3Solid solutions
2Aluminium compounds
2Ambient temperature
2Antimony compounds
2Binary compounds
2Detectivity
2Gallium antimonides
2Gallium compounds
2Heterojunctions
2Indium Arsenides
2Indium antimonides
2Indium arsenides
2Infrared detectors
2Photoconductivity
2Semiconductor growth
2Semiconductor materials
1Aluminium antimonides
1Antimonides arsenides
1Aqueous solutions
1Band bending
1Band energy diagram
1Band splitting
1Band structure
1Barrier heights
1Capacitance voltage characteristics
1Carrier separation
1Charge carrier
1Dark conductivity
1Electric field
1Electrical conductivity
1Electroluminescence
1Electron mobility
1Electronic avalanche
1Energy gap
1Experiments
1Fabrication
1Gallium Indium Antimonides arsenides Mixed
1Galvanomagnetic effect
1Heterostructures
1Hole concentration
1Holmium
1Infrared radiation
1Inorganic compound
1Interfaces (materials)
1Ionization coefficient
1Lattice constants
1Liquid phase epitaxy
1Long wavelength photodiodes
1Mean free path
1Ohmic contacts
1Optical materials
1Optical phonon
1Passivation
1Phase diagrams
1Phonon scattering
1Photoelectric effect
1Photoelectrical parameters
1Photosensitivity
1Quantum wells
1Quantum yield
1Quaternary compounds
1Radiation detectors
1Response functions
1Semiconducting antimony compounds
1Semiconducting indium compounds
1Semiconductor device manufacture
1Sodium Compounds
1Solid solubility
1Spectral response
1Spin orbit interaction
1Substrates
1Sulfur
1Sulfur Compounds
1Theory
1Thermodynamic analysis
1Thermodynamic equilibrium
1Valence band
1p n junctions

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HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
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