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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « H. H. Gao »
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H. Guingard < H. H. Gao < H. Hardtdegen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000752 (2002-04-22) Optical switching in midinfrared light-emitting diodes
000A53 (2000-08-07) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm
000C84 (1999-06-15) Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000D90 (1999) High power 4.6 μm light emitting diodes for CO detection

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Experimental study
3III-V semiconductors
3Indium compounds
3LPE
2Gas detector
2Gas sensors
2Light emitting diodes
2Line intensity
1Auger recombination
1Binary compound
1Buffer layer
1Carbon Oxides
1Carbon dioxide
1Carbon monoxide
1Carrier density
1Chemical sensor
1Crystal purification
1Electroluminescence
1Environmental monitoring
1Epitaxy
1Excitons
1Fabrication
1Gadolinium
1Gettering
1Getters
1High power
1III-V compound
1Impurity states
1Indium Antimonides
1Indium Antimonides arsenides
1Indium Antimonides arsenides phosphides
1Indium Arsenides
1Indium Phosphides
1Infrared detectors
1Infrared radiation
1Light emitting diode
1Line widths
1Liquid phase
1Luminescence spectrum
1Measuring instrument
1Optical sensors
1Optical switches
1Output power
1Performance
1Photoluminescence
1Purification
1Quantum efficiency
1Quaternary compound
1Radiation effects
1Radiation quenching
1Room temperature
1Semiconductor detectors
1Semiconductor epitaxial layers
1Semiconductor growth
1Ternary compound
1Thermal characteristic
1Voltage current curve
1p i n photodiodes

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