G. N. Talakin < G. N. Talalakin < G. P. Anisimova

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 33.
[0-20] [0 - 20][0 - 33][20-32][20-40]

Ident.	Authors (with country if any)	Title
000528 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003)		InAs and InAsSb LEDs with built-in cavities
000727 (2002-08-12)		6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000860 (2001-12)		Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10)		High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000902 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03)		Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000916 (2001-03)		Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07)		InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
000A94 (2000-04)		Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)
000B28 (2000-01)		Light Emitting Diodes for the Spectral Range of λ = 3.3-4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C
000C68 (1999-08)		Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C88 (1999-06)		Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
000D26 (1999-02)		Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range
001106 (1997)		Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors
001155 (1996-09)		Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm
001163 (1996-08)		InAsSbP-InAs-InAsSbP laser double-heterostructures with a p-n junction in the active region

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List of associated KwdEn.i

Nombre de documents	Descripteur
24	Experimental study
16	Gallium arsenides
16	Indium compounds
10	Antimony compounds
10	Light emitting diodes
10	Photoluminescence
8	Electroluminescence
8	III-V semiconductors
7	Indium Antimonides arsenides phosphides
7	Indium arsenides
7	Semiconductor lasers
6	Indium antimonides
6	Theoretical study
5	Inorganic compound
5	Semiconductor materials
5	Thin film
4	Heterojunction
4	Indium Arsenides
4	Indium phosphides
4	Photodiodes
4	Semiconductor heterojunctions
4	Solid solutions
3	Arsenic compounds
3	Chemical composition
3	Epitaxy
3	Gadolinium
3	Gallium Indium Antimonides arsenides Mixed
3	Gallium compounds
3	Heterojunctions
3	LPE
3	Phosphorus compounds
3	p n heterojunctions
2	Acceptor center
2	Carbon dioxide
2	Dislocation
2	Dislocation density
2	Energy gap
2	Energy-level transitions
2	Epitaxial film
2	Experiments
2	Growth from liquid
2	Heterostructures
2	Laser tuning
2	Narrow band gap semiconductors
2	Quaternary compounds
2	Radiative recombination
2	Semiconductor growth
2	Solid solution
1	Activation energy
1	Analytical method
1	Anisotropy
1	Antimony Arsenides
1	Application
1	Arsenic Antimonides
1	Auger recombination
1	Bent graded layer
1	Binary compound
1	Carbon monoxide
1	Carrier mobility
1	Cavity
1	Charge carrier recombination
1	Circular mesa constructions
1	Computer simulation
1	Crystal growth
1	Current density
1	Current voltage characteristics
1	Defect
1	Device
1	Doping
1	Double heterojunction
1	Elastoplastic strain
1	Electric conductivity
1	Electric currents
1	Electrical conductivity
1	Electron density
1	Electron-hole recombination
1	Emission
1	Emission spectrum
1	Epitaxial layers
1	Flip chip devices
1	Gadolinium compounds
1	Gallium Antimonides
1	Gallium Indium Arsenides Mixed
1	Gallium antimonides
1	Gas detector
1	Graded band gap
1	Heteroepitaxy
1	Indium Antimonides Arsenides Phosphides
1	Indium Antimonides arsenides
1	Infrared sensing
1	Infrared sources
1	Infrared spectra
1	Injection laser
1	Interface states
1	Interface structure
1	Laser
1	Laser materials
1	Lattice constants
1	Lattice match
1	Lead selenides

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