G. G. Zakirov < G. G. Zegrya < G. Galistu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000195 (2008)		Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000402 (2004-06)		Electron-Electron Scattering in Stepped Quantum Wells
000563 (2003-03-01)		Injection cascade lasers with graded gap barriers
000564 (2003-03)		Structure of Energy Quantum Levels in a Quantum Dot Shaped as an Oblate Body of Revolution
000575 (2003-02)		Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000628 (2003)		Non-linear power-current characteristics of quantum well lasers at high injection
000647 (2003)		Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
000724 (2002-08-25)		Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field
000887 (2001-08)		Threshold Characteristics of λ = 1.55 μm InGaAsP/InP Heterolasers
000966 (2001)		Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface
000B03 (2000-04)		A Numerical Calculation of Auger Recombination Coefficients for InGaAsP/InP Quantum Well Heterostructures
000B33 (2000)		Threshold characteristics of InGaAsP/InP multiple quantum well lasers
000C54 (1999-09)		InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm)
000D17 (1999-03)		Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D88 (1999)		High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers
000E53 (1998-07-01)		Optical loss in InAs-based long-wavelength lasers
000E54 (1998-07)		Theoretical study of the threshold characteristics of InGaN multiquantum well lasers
000F86 (1997-11)		Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers
000F94 (1997-10)		Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures
001031 (1997-06)		Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation

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List of associated KwdEn.i

Nombre de documents	Descripteur
14	Experimental study
14	Gallium arsenides
14	Indium compounds
12	Semiconductor lasers
12	Theoretical study
9	III-V semiconductors
8	Indium arsenides
7	Quantum well lasers
6	Gallium compounds
6	Semiconductor heterojunctions
6	Semiconductor quantum wells
5	Binary compounds
5	Threshold current
4	Auger effect
4	Current density
4	Electroluminescence
4	Electron-hole recombination
4	Gallium antimonides
4	Heterojunctions
4	Indium antimonides
4	Indium phosphides
3	Semiconductor materials
3	Temperature dependence
3	Valence bands
2	Arsenic compounds
2	Auger recombination
2	Charge carrier recombination
2	Conduction bands
2	Gallium phosphides
2	Heterojunction
2	Heterostructures
2	Inorganic compound
2	Laser
2	Laser theory
2	Low temperature
2	Luminous intensity current characteristic
2	Phosphorus compounds
2	Photoluminescence
2	Quaternary compounds
2	Radiative recombination
2	Semiconductor quantum dots
2	Solid solutions
2	Temperature
2	Ternary compounds
1	Aluminium compounds
1	Analytical method
1	Antimony compounds
1	Application
1	Band structure
1	Carrier density
1	Carrier relaxation time
1	Charge carrier temperature
1	Charge carriers
1	Chemical composition
1	Computerized simulation
1	Cyclotron resonance
1	DH lasers
1	Defect absorption spectra
1	Diodes
1	Drive current
1	Electric currents
1	Electron hole plasma
1	Electron-electron scattering
1	Electronic structure
1	Electrons
1	Experiments
1	Gallium Arsenides phosphides
1	Gallium Indium Antimonides arsenides Mixed
1	Gallium Indium Antimonides phosphides Mixed
1	Green's function methods
1	Heat treatments
1	Impurity states
1	Indium Antimonides arsenides phosphides
1	Indium Arsenides
1	Indium Arsenides phosphides
1	Infrared laser
1	Infrared sources
1	Injection current
1	Instrumentation
1	Intensive spontaneous emission
1	Interface electroluminescence
1	Interface states
1	Landau levels
1	Laser diodes
1	Laser materials
1	Leakage currents
1	Light emission
1	Line widths
1	Localized states
1	MOCVD
1	Magnetic field effects
1	Mid infrared lasers
1	Mid infrared radiation
1	Multiple quantum well
1	Narrow band gap semiconductors
1	Numerical method
1	Optical gain
1	Optical losses
1	Optical polarization
1	Optimization

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