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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « G. E. Tsyrlin »
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G. E. Tsydynzhapov < G. E. Tsyrlin < G. E. W. Bauer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000509 (2003-11) Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000763 (2002-03) Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000A36 (2000-11) The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A45 (2000-09-20) Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface
000A62 (2000-07) Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range
000A89 (2000-05) Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm
000A91 (2000-05) A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000A96 (2000-04) Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
000C85 (1999-06) Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
000F98 (1997-10) A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system
001011 (1997-08) Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
001013 (1997-08) Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
13Indium compounds
11Gallium arsenides
7Molecular beam epitaxy
7Photoluminescence
7Semiconductor quantum dots
6Semiconductor heterojunctions
5Arsenic compounds
4III-V semiconductors
4RHEED
4Semiconductor growth
3Nanostructured materials
3Quantum dots
2Epitaxial layers
2Epitaxy
2Excitons
2STM
2Silicon
1Arsenic
1Atomic clusters
1Band structure
1Computer aided analysis
1Computerized instrumentation
1Electron diffraction
1Electron diffraction crystallography
1Electron-hole recombination
1Electronic structure
1Indium
1Instrumentation
1Interface structure
1Localized states
1Luminescence
1Measuring methods
1Multilayers
1Optical properties
1Recording
1Scanning electron microscopy
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Signal processing
1Solid solutions
1Surface structure
1Surface topography
1Theoretical study
1Transmission electron microscopy
1VPE

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