Auteurs
Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « E. Hulicius »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
E. Hamakawa < E. Hulicius < E. I. Chaikina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000518 (2003-10) Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000793 (2002) Raman scattering study of type II GaInAsSb/InAs heterostructures
000796 (2002) Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000877 (2001-09-15) Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
000C20 (1999-12-01) Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
3Electroluminescence
3Gallium arsenides
3Indium compounds
3Photoluminescence
2Binary compounds
2Charge carrier recombination
2Gallium Antimonides arsenides
2Heterostructures
2III-V semiconductors
2Radiative recombination
2Semiconductor epitaxial layers
2Semiconductor heterojunctions
2Semiconductor materials
2Solid solutions
1Acceptor center
1Aluminium antimonides
1Ambient temperature
1Band bending
1Band structure
1Carrier density
1Composition effect
1Deep level
1Defect states
1Detectivity
1Dielectric function
1Doping
1Electron localization
1Energy gap
1Energy level
1Epitaxial layers
1Gallium Antimonides
1Gallium Indium Antimonides arsenides Mixed
1Heterojunction
1Hole
1Hole density
1Impurities
1Indium Antimonides arsenides
1Indium Arsenides
1Indium additions
1Indium arsenides
1Infrared detectors
1Infrared radiation
1Inorganic compound
1Interface states
1LPE
1Line splitting
1Narrow band gap semiconductors
1Phonon mode
1Photoconductivity
1Quantum wells
1Quantum yield
1Quaternary compounds
1Radiation detectors
1Raman spectra
1Response functions
1Semimetals
1Surface recombination
1Tellurium additions
1Ternary compounds

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "E. Hulicius" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "E. Hulicius" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    E. Hulicius
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024