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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « D. Z. Garbuzov »
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D. Z. Gabruzov < D. Z. Garbuzov < D. Zushinskiy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
001457 (1994-02) Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm
001566 (1993) High-power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
001676 (1992) High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
001805 (1991) Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW
001807 (1991) High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
001816 (1991) Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001971 (1989) High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers
001A26 (1989)
001B31 (1988)
001B32 (1988)
001C51 (1987)
001C52 (1987)
001C63 (1987)
001D66 (1986)
001D68 (1986)
001E26 (1985)
001E77 (1984)
001E93 (1984)
001E95 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
17Gallium Indium Arsenides phosphides Mixed
11Semiconductor laser
8Heterojunction
8Indium Phosphides
8Injection laser
7Gallium Arsenides
5Epitaxy
5Quantum size effect
4Double heterojunction
4Photoluminescence
4Quantum well
3Experimental study
3Growth from liquid
3SCH laser
3Thin film
2CW laser
2Crystal growth
2Gallium Indium Phosphides Mixed
2Inorganic compound
2Manufacturing
2Semiconductor materials
2Support
2Theoretical study
2Threshold
1Active layer
1Arsenic compounds
1Auger electron spectrometry
1Auger recombination
1Buried laser
1Buried layer
1Charge carrier recombination
1Chemical composition
1Convection
1Crystal perfection
1Design
1Diffusion
1Electron temperature
1Gallium Indium Arsenides phosphides
1Gallium arsenides
1Gallium phosphides
1Growth
1Growth from melt
1Heteroepitaxy
1High power
1High resolution
1Hot carrier
1Indium Gallium Arsenides phosphides Mixed
1Indium phosphides
1Internal flow
1Kinetics
1Lifetime
1Liquid phase
1Luminescence
1Microdensitometry
1Motion
1Operating mode
1Photoelectron emission
1Power
1Quantum yield
1Quaternary compounds
1Reliability
1Semiconductor lasers
1Single mode laser
1Stimulated emission
1Temperature dependence
1Thickness
1Transmission electron microscopy
1X ray

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