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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « D. S. Sizov »
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D. S. Shipitsin < D. S. Sizov < D. S. Uryupina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000275 (2007) Analysis of the local indium composition in ultrathin InGaN layers
000551 (2003-05) Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000636 (2003) MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000642 (2003) Investigation of the formation of InAs QD's in a AlGaAs matrix
000662 (2003) High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000716 (2002-09) The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000747 (2002-05) Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells
000917 (2001-03) InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As
000A21 (2000-12-15) Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A36 (2000-11) The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A89 (2000-05) Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
10Gallium arsenides
7Indium compounds
7Photoluminescence
7Quantum dots
5Molecular beam epitaxy
4Semiconductor quantum dots
3Arsenic compounds
3Indium arsenides
2Aluminium compounds
2Binary compounds
2Excitons
2III-V semiconductors
2Semiconductor heterojunctions
2Semiconductor lasers
2Ternary compounds
2Transmission electron microscopy
1Aluminium arsenides
1Aluminium nitrides
1Band offset
1CVD
1Chemical composition
1Confinement
1Crystal defects
1Dislocations
1Energy gap
1Energy-level transitions
1Epitaxial layers
1Gallium nitrides
1Ground states
1Growth mechanism
1Heat treatments
1High-power lasers
1Indium nitrides
1Infrared laser
1Interface states
1Interface structure
1Laser diodes
1Localization
1Localized states
1Luminescence
1Measuring methods
1Multilayers
1Nanostructured materials
1Nanostructures
1Optical properties
1Output power
1Quantum well lasers
1Quantum wells
1Self-adjusting systems
1Semiconductor materials
1TEM
1Threshold current

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