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Index « Auteurs » - entrée « D. O. Filatov »
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D. Noreika < D. O. Filatov < D. Oberli  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000410 (2004-04) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000442 (2004) Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000660 (2003) Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
000797 (2002) Photoelectric spectroscopy of InAs/GaAs quantum dot structures in a semiconductor/electrolyte system
000873 (2001-10) Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures
000901 (2001-05) Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
000927 (2001-01) Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
000970 (2001) Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy
000E31 (1998-10) Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy
000E46 (1998-09) Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
001006 (1997-09) Photoelectric properties of GaAs/InAs heterostructures with quantum dots
001152 (1996-10) Diagnostics of heterostructures with quantum wells by the method of capacitive photovoltage spectroscopy
001199 (1996-03-25) Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Gallium arsenides
11Experimental study
8Indium compounds
6Semiconductor quantum dots
5Photoluminescence
4III-V semiconductors
4Indium arsenides
4Quantum dots
3Atomic force microscopy
3Binary compounds
3Photovoltaic effects
3Theoretical study
2Arsenic compounds
2Defect states
2Hopping conduction
2Interface states
2MOCVD
2Passivation
2Photoconductivity
2Photoelectric effect
2Property structure relationship
2Quantum Hall effect
2Semiconductor heterojunctions
2Semiconductor quantum wells
2Semiconductor-electrolyte boundaries
2VPE
1Bismuth
1Carrier density
1Charge carrier trapping
1Cladding
1Crystal growth from vapors
1Diffusion
1Electric field effects
1Electrical conductivity
1Electrochemical method
1Electron density
1Electron localization
1Electron-hole recombination
1Electronic density of states
1Electronic structure
1Excited states
1Glow discharges
1Ground states
1IV characteristic
1Impurities
1Inclusions
1Interfaces
1MOVPE method
1Magnetic field effects
1Magnetooscillatory properties
1Magnetoresistance
1Measuring methods
1Metal-insulator transition
1Morphology
1Mott transition
1Multilayers
1Nanostructures
1Negative magnetoresistance
1Ohmic contacts
1Optical fibers
1Optical polarization
1Optical windows
1Oscillations
1Overlayers
1Photoelectron spectroscopy
1Plasma applications
1Process control
1Property composition relationship
1Quantum wells
1Roughness
1Selective etching
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor materials
1Shubnikov-de Haas effect
1Size effect
1Surface diffusion
1Surface electron state
1Surfaces
1Temperature dependence
1Ternary compounds
1Transport processes
1Weak localisation
1electron transport theory

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