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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « D. I. Lubyshev »
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D. I. Ismajlov < D. I. Lubyshev < D. I. Merkurisov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001149 (1996-10) Magnetic field-dependent microwave absorption due to superconducting In-Ga clusters in gallium arsenide grown by molecular-beam epitaxy
001272 (1995-12) Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
001568 (1993) Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity
001902 (1990) Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
3Gallium arsenides
3Molecular beam epitaxy
3Semiconductor materials
2Beryllium additions
2Silicon additions
1Absorption spectra
1Acceptor center
1Aggregation
1Annealing
1Antisite defect
1Arsenic
1Atomic clusters
1Binary compounds
1Carbon
1Charge carrier recombination
1Crystal defect density
1Crystal doping
1Donor center
1Doped materials
1Doping
1Electric conductivity
1Epitaxial film
1Epitaxial layers
1Exciton
1Gallium Arsenides
1Impurity density
1Impurity site
1Indium
1Indium additions
1Inorganic compound
1Lattice parameters
1Microstructure
1Microwave spectra
1Nanostructured materials
1Non stoichiometric composition
1Photoluminescence
1Planar doping
1Precipitation (chemical)
1Solid clusters
1Spatial distribution
1Sublattice
1Superconductivity
1TEM
1Thermal annealing
1Thin films

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