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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « D. A. Vinokurov »
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D. A. Vasyukov < D. A. Vinokurov < D. A. Yarekha  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000094 (2010) Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
000261 (2007) Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000500 (2003-12) MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
000520 (2003-09) Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000524 (2003-08) Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures
000866 (2001-11) MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000923 (2001-02) Optical Study of InP Quantum Dots
000C54 (1999-09) InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm)
000C74 (1999-07) Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
000E26 (1998-11-10) Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands
000E45 (1998-09) Optical orientation of donor-bound excitons in nanosized InP/InGaP islands

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
9Indium compounds
8III-V semiconductors
7Photoluminescence
6Gallium arsenides
4Semiconductor quantum dots
3Semiconductor heterojunctions
3Semiconductor lasers
2Excitons
2Gallium compounds
2Interface states
2MOCVD
2Phosphorus compounds
2VPE
1Aluminium Gallium Arsenides Mixed
1Aluminium arsenides
1Aluminium compounds
1Band structure
1Buried layers
1Carrier mobility
1Cathodoluminescence
1Charge carriers
1Charge transport
1Continuous phase modulation
1Crystal structure
1Defects
1Diffusion length
1Diodes
1Dynamic nuclear polarization
1Electron beams
1Electron microprobe analysis
1Electron probes
1Electronic structure
1Epitaxial layers
1Gallium Arsenides
1Gallium nitride
1Heterostructures
1III-V compound
1Indium Arsenides
1Indium arsenides
1Indium nitride
1Infrared sources
1Island structure
1Laser diodes
1Microwave-optical double resonance
1Multilayer
1Multilayers
1Nanometer scale
1Nanostructured materials
1Nanostructures
1Non destructive method
1Optical polarization
1Penetration depth
1Scattering lengths
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Solid solutions
1Synchrotron radiation
1Theoretical study
1Thin films
1Transmission electron microscopy
1Transport processes
1Transport properties
1XANES
1ns range
1self-organised criticality

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