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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « C. M. Sotomayor Torres »
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C. M. S. Torres < C. M. Sotomayor Torres < C. M. Sotomayor-Torres  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000838 (2002) Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
000980 (2001) Large spectral splitting of TE and TM components of QDs in a microcavity
000987 (2001) Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C11 (2000) 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
001017 (1997-07-01) Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos
001043 (1997-04) Interface phenomena and optical properties of structurally confined InP quantum wire ensembles.
001136 (1996-12-15) Two-dimensional excitonic emission in InAs submonolayers
001248 (1996) Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates
001316 (1995-05-15) Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
001336 (1995-01-02) Response to Comment: ''Comment on 'Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces' '' [Appl. Phys. Lett. 66, 111 (1995)]
001410 (1994-10-15) Optical spectroscopic studies of InAs layer transformation on GaAs surfaces
001427 (1994-07-15) Magneto-optical properties in ultrathin InAs-GaAs quantum wells
001445 (1994-03-21) Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Gallium arsenides
11Indium arsenides
11Photoluminescence
10Experimental study
6Binary compounds
5Semiconductor materials
4Heterostructures
4Quantum dots
4Ternary compounds
3Excitons
3Molecular beam epitaxy
3Monolayers
2Binding energy
2III-V semiconductors
2Indium compounds
2Magneto-optical effects
2Microcavity
2Optical anisotropy
2Raman spectra
2Semiconductor lasers
2Semiconductor quantum wires
1Ambient temperature
1Angular resolution
1Annealing
1Aspect ratio
1Bragg reflection
1CVD coatings
1Carrier mobility
1Cavitation
1Chemisorption
1Coatings
1Crystal defects
1Distributed Bragg reflector lasers
1Effective mass
1Electromagnetic wave diffraction
1Electron capture
1Electron-phonon coupling
1Electronic density of states
1Energy levels
1Energy-level transitions
1Excitation spectrum
1Excited states
1Facet
1Faceting
1Far field
1Gain
1Infrared laser
1Interface states
1Landau levels
1Laser diodes
1Lattice vibrations
1Luminescence
1Magnetic field effects
1Manufacturing processes
1Mechanical shock
1Nanostructured materials
1Optical polarization
1Optical properties
1Optical reflection
1Oscillator strengths
1Output power
1Photodetectors
1Polarization
1Quantum wells
1Quantum wires
1Reactive ion etching
1Reflectance
1Resonance
1Self organization
1Sorptive properties
1Strains
1Subband
1Superlattices
1Surface recombination
1Temperature dependence
1Temperature effects
1Threshold current
1Vertical cavity laser
1Visible spectra
1XRD

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