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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « B. Ya. Mel Tser »
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B. Ya. Ber < B. Ya. Mel Tser < B. Ya. Meltser  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000637 (2003) MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
000832 (2002) Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
000847 (2002) Control by an electric field of electron-hole separation in type-II heterostructures
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
001312 (1995-06) Measurement of the energy of interface donor centers in a GaSb/InAs/GaSb quantum well

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
4Gallium antimonides
4Heterostructures
4Indium arsenides
3Photoluminescence
3Quantum wells
2Aluminium antimonides
2Binary compounds
2Crystal growth from vapors
2Epitaxial layers
2Magnetic field effects
2Molecular beam epitaxy
1Aluminium Antimonides arsenides
1Arsenic Antimonides
1Atomic force microscopy
1Cadmium selenides
1Compressive stress
1Donors
1Electric field effects
1Electron mobility
1Energy relaxation
1Energy-level splitting
1External fields
1Gallium arsenides
1Growth mechanism
1Heteroepitaxy
1Hot electrons
1III-V semiconductors
1IV characteristic
1Impurities
1Indium Antimonides arsenides
1Indium antimonides
1Infrared radiation
1Interface states
1Island structure
1Manganese additions
1Microwave radiation
1Monolayers
1Nanometer scale
1Noise
1Photoconductivity
1Quantum dots
1Radiative recombination
1Relaxation time
1Semiconductor materials
1Semimagnetic semiconductors
1Spintronics
1Strained quantum well
1Surface preparation
1TEM
1Temperature dependence
1Temperature effects
1Transmission electron microscopy
1Two-dimensional electron gas
1Valence bands
1XRD
1Zeeman effect
1Zinc tellurides

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