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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « B. V. Pushnyi »
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B. V. Novikov < B. V. Pushnyi < B. V. Tsarenkov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000195 (2008) Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000532 (2003-08) Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000618 (2003) Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Photoluminescence
2Arsenic compounds
2Experimental study
2Indium compounds
2Mid infrared radiation
1Antimony compounds
1Auger recombination
1Chemical composition
1Electrical conductivity
1Electroluminescence
1Epitaxial layers
1Gallium Indium Antimonides phosphides Mixed
1Gallium antimonides
1Heterojunctions
1Heterostructures
1III-V semiconductors
1Indium antimonides
1Indium arsenides
1Indium phosphide
1Laser materials
1Light emitting diode
1Light emitting diodes
1MOCVD
1MOVPE method
1Magnesium
1Magnetoresistance
1Microelectronic fabrication
1Narrow band gap semiconductors
1Optical characteristic
1Phosphorus compounds
1Quaternary compound
1Semiconductor doping
1Semiconductor heterojunctions
1Ternary compound
1Threshold current
1VPE

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