B. N. Sverdlov < B. N. Zvonkov < B. Naser

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 56.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000084 (2011)		Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000096 (2010)		Resonant enhancement of the transversal Kerr effect in the InMnAs layers
000110 (2010)		Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
000153 (2009)		Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
000160 (2009)		Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs
000163 (2009)		Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000172 (2009)		Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000186 (2008)		Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
000210 (2008)		Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
000234 (2007)		Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer
000315 (2006)		Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots
000359 (2005)		Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers
000371 (2005)		Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000389 (2005)		Antilocalization and spin-orbit coupling in the hole gas in strained GaAs/InxGa1-xAs/GaAs quantum well heterostructures
000410 (2004-04)		Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000438 (2004)		Weak antilocalization in quantum wells in tilted magnetic fields
000442 (2004)		Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000495 (2004)		1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
000544 (2003-06)		Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
000548 (2003-05-15)		Electron-electron interaction with decreasing conductance
000556 (2003-04)		Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots

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List of associated KwdEn.i

Nombre de documents	Descripteur
42	Gallium arsenides
37	Experimental study
22	Indium arsenides
16	Indium compounds
16	Photoluminescence
14	Binary compounds
12	Quantum wells
11	Heterostructures
11	Ternary compounds
10	Semiconductor materials
9	Electrical conductivity
9	Gallium Indium Arsenides Mixed
9	III-V semiconductors
8	Quantum dots
8	Semiconductor quantum dots
7	Semiconductor quantum wells
6	Gallium Arsenides
6	Indium phosphides
6	Magnetic field effects
6	Magnetoresistance
6	Photoconductivity
6	Theoretical study
6	Two-dimensional electron gas
5	Gallium phosphides
5	Hall effect
5	Quantum well
5	Semiconductor heterojunctions
5	Semiconductor lasers
5	Weak localisation
4	Atomic force microscopy
4	Circular polarization
4	Electroluminescence
4	Ferromagnetic materials
4	Planar doping
4	Shubnikov-de Haas effect
4	Temperature dependence
4	Temperature effects
4	Tunnel effect
4	VPE
3	Charge carrier trapping
3	Excited states
3	Hopping conduction
3	Impurities
3	Photoelectric effect
3	Photovoltaic effects
3	Quantum Hall effect
3	Strained quantum well
3	Transport processes
3	Waveguides
3	XRD
3	Zeeman effect
2	Acceptor center
2	Arsenic compounds
2	Carrier lifetime
2	Cladding
2	Coupled waveguide
2	Crystal growth from vapors
2	Defect states
2	Electron localization
2	Electronic density of states
2	Exchange interaction
2	Indium Arsenides
2	Infrared radiation
2	Inorganic compound
2	Interface states
2	Kerr magneto-optical effect
2	Laser diodes
2	Light emitting diode
2	MOCVD
2	MOVPE method
2	Magnetooscillatory properties
2	Manganese
2	Morphology
2	Optical polarization
2	Output power
2	Passivation
2	Polarization
2	Property structure relationship
2	Pulsed laser deposition
2	Quantum interference phenomena
2	Quantum size effect
2	Radiation effects
2	Random potential
2	Relaxation time
2	Roughness
2	Schottky barrier
2	Schottky barriers
2	Semiconductor epitaxial layers
2	Semiconductor-electrolyte boundaries
2	Solid solutions
2	Space charge
2	Spin relaxation
2	Spin-orbit interactions
2	Superlattices
2	Temperature effect
2	Thin films
2	Transition elements
2	p n junctions
1	AES
1	Activation energy

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