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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « B. I. Sysoev »
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B. I. Rapoport < B. I. Sysoev < B. J. Ber  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000D70 (1999) Optical nonuniformity of thin In2S3 layers prepared by heat treatment of InP in sulfur vapor
001235 (1996) Preparation of In2Te3/InAs heterojunctions by heterovalent substitution
001347 (1995) Structure of indium sulfide layers on InAs
001442 (1994-05) Electrical properties of InP-In2S3 heterostructures
001489 (1994) Ellipsometrical study of indium sulfide film growth process on InP
001752 (1991) Properties of an interface between InAs and a thin semiinsulating In2S3 film
001823 (1991) Electron processes in solid state heterostructures on the basis of indium arsenide
001A70 (1988) Heterostructures on the basis of indium arsenide with semi-insulating A2IIIB3VI compound layers
001A87 (1988)
001D16 (1986) Electrophysical properties of In2Te2-InAs heterojunctions

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
5Heterojunction
5Semiconductor materials
4Indium Arsenides
4Indium sulfides
3Binary compounds
3Indium Sulfides
3Inorganic compound
3Thin films
3Voltage capacity curve
2Ellipsometry
2Heat treatments
2Heterojunctions
2Heterostructures
2Indium Tellurides
2Indium phosphides
2SEM
2Transport process
2Voltage current curve
1AES
1Anomalous properties
1CV characteristic
1Capacitance
1Charge carrier
1Charge carrier mobility
1Charge carrier scattering
1Chemical composition
1Chemical reactions
1Crystal growth
1Crystal growth from vapors
1Crystal structure
1Electric field
1Electric polarizability
1Electrical insulation
1Electron diffraction
1Electron microprobe
1Electron probe
1Fabrication
1Film growth
1Films
1Free carrier
1Gallium Arsenides
1Gallium Indium Tellurides Mixed
1Gallium Selenides
1Hot wall growth
1III-VI compound
1IV characteristic
1Impurity density
1Indium arsenides
1Indium tellurides
1Interface
1Interfacial layer
1Inversion layer
1Ion substitution
1MIS structure
1Microanalysis
1Modeling
1N type conductivity
1Optical constants
1Relaxation
1Shielding effect
1Silicon
1Solid solid interface
1Temperature dependence
1Thick film
1Transition layer
1Vacancy
1X ray

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