B. A. Maksimov < B. A. Matveev < B. A. Natig

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 41.
[0-20] [0 - 20][0 - 41][20-40]

Ident.	Authors (with country if any)	Title
000099 (2010)		Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
000115 (2010)		InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000145 (2009)		Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000235 (2007)		Performance of InAs-based infrared photodiodes
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000432 (2004-01)		Strongly Compensated InAs Obtained by Proton Irradiation
000528 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000656 (2003)		InAs and InAsSb LEDs with built-in cavities
000727 (2002-08-12)		6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000735 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000858 (2001-12-17)		Current crowding in InAsSb light-emitting diodes
000860 (2001-12)		Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
000872 (2001-10)		High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
000902 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
000915 (2001-03)		Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
000916 (2001-03)		Negative Luminescence in p-InAsSbP/n-InAs Diodes
000A66 (2000-07)		InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy

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List of associated KwdEn.i

Nombre de documents	Descripteur
27	Experimental study
18	Indium compounds
16	Gallium arsenides
12	Light emitting diodes
10	Antimony compounds
10	Indium arsenides
10	Photoluminescence
9	III-V semiconductors
8	Electroluminescence
7	Indium Antimonides arsenides phosphides
7	Indium Arsenides
7	Photodiodes
7	Semiconductor lasers
6	Indium antimonides
6	Theoretical study
5	Binary compounds
5	Inorganic compound
5	Semiconductor materials
5	Thin film
4	Arsenic compounds
4	Heterojunction
4	Heterojunctions
4	Heterostructures
4	Indium phosphides
4	LPE
4	Semiconductor heterojunctions
4	Solid solutions
3	Ambient temperature
3	Chemical composition
3	Epitaxy
3	Gadolinium
3	Gallium Indium Antimonides arsenides Mixed
3	Gallium compounds
3	Phosphorus compounds
3	p n heterojunctions
2	Acceptor center
2	Binary compound
2	Carbon dioxide
2	Dislocation
2	Dislocation density
2	Energy gap
2	Energy-level transitions
2	Epitaxial film
2	Experiments
2	Flip chip bonding
2	Gas detector
2	Growth from liquid
2	Imagery
2	Laser tuning
2	Light emitting diode
2	Measuring methods
2	Mid infrared radiation
2	Narrow band gap semiconductors
2	Optical sensors
2	Optoelectronic devices
2	Photonic crystals
2	Quaternary compounds
2	Radiative recombination
2	Semiconductor growth
2	Solid solution
2	Temperature dependence
1	Activation energy
1	Analytical method
1	Anisotropy
1	Antimony Arsenides
1	Application
1	Arsenic Antimonides
1	Atomic force microscopy
1	Auger recombination
1	Bent graded layer
1	Cadmium
1	Carbon monoxide
1	Carrier density
1	Carrier mobility
1	Cavity
1	Charge carrier recombination
1	Circular mesa constructions
1	Computer simulation
1	Computerized simulation
1	Conduction bands
1	Crystal growth
1	Current density
1	Current voltage characteristics
1	Defect
1	Defect states
1	Device
1	Doping
1	Double heterojunction
1	Elastoplastic strain
1	Electric conductivity
1	Electric currents
1	Electrical conductivity
1	Electron density
1	Electron-hole recombination
1	Emission
1	Emission spectrum
1	Epitaxial layers
1	Far field
1	Fermi level
1	Figure of merit

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