Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. Zakharova »
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A. Z. Magomedov < A. Zakharova < A. Zalcharova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000193 (2008) Optical absorption of polarized light in InAs/GaSb quantum wells
000416 (2004-03-15) Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
000460 (2004) New peculiarities of interband tunneling in broken-gap heterostructures
000479 (2004) Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells
000494 (2004) A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields
000725 (2002-08-15) Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
000821 (2002) Influence of band state mixing on interband magnetotunnelling in broken-gap heterostructures
000859 (2001-12-15) Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
000B72 (2000) Interband resonant tunnelling in quantizing magnetic field
000D74 (1999) Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling
000F42 (1998) Interband tunnelling in semiconductor heterostructures
001000 (1997-09-01) Self-consistent modeling of the current-voltage characteristics of resonant tunneling structures with type II heterojunctions
001098 (1997) Phonon-assisted interband tunnelling in single-barrier structures with type II heterojunctions
001230 (1996) Self-consistent calculation of current-voltage characteristics of resonant tunnelling structures with type II heterojunctions
001352 (1995) Resonant tunneling in type II heterostructures
001472 (1994) Spin orientation due to longitudinal currenat and interband tunnelling in narrow-gap heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Indium arsenides
9Gallium antimonides
9Theoretical study
8Aluminium antimonides
7Tunnel effect
6Binary compounds
6Semiconductor materials
5Heterostructures
5Interband transitions
5Semiconductor quantum wells
4Energy gap
4Gallium compounds
4III-V semiconductors
4Indium compounds
4Quantum wells
3Band structure
3Double barrier structure
3Envelope function
3Heterojunctions
3k.p calculations
2Electron tunneling
2Experimental study
2Hamiltonians
2III-V compound
2IV characteristic
2Interface states
2Landau levels
2Poisson equation
2Scattering theory
2Self consistency
2Semiconductor diodes
2Ternary compounds
2Transfer matrix method
1Absorption spectra
1Aluminium Antimonides
1Aluminium compounds
1Anisotropy
1Asymmetry
1Band bending
1Barrier layer
1Bias voltage
1Binary compound
1Calculations
1Carrier concentration
1Circular polarization
1Comparative study
1Computer simulation
1Current
1Current density
1Current voltage characteristics
1Deformation
1Dispersion relations
1Electric conductivity
1Electric field effects
1Electrical conductivity transitions
1Electron charge distribution
1Electron hole pair
1Electron state
1Electronic structure
1Energy levels
1Experiments
1External fields
1Gallium Antimonides
1Heavy fermions
1Hybridization
1Indium Arsenides
1Interband transition
1Internal stresses
1Kane model
1Linear polarization
1Liquid nitrogen
1Magnetic field effects
1Mathematical models
1Matrix elements
1Matrix method
1Metal-insulator transition
1Miniband
1Mismatch lattice
1Modeling
1Multilayers
1Optical phonons
1Peak
1Perturbation theory
1Phase transitions
1Potential distribution
1Probability
1Quantum magnetic field
1Quasiparticles
1Resonant tunnel effect
1Resonant tunneling structures
1Resonant tunnelling
1Room temperature
1SCF calculations
1Sandwich structures
1Schroedinger equation
1Self consistent calculation
1Semiconducting aluminum compounds
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor semimetal transition

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