A. Yu. Chernyshov < A. Yu. Egorov < A. Yu. Egovov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 73.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000406 (2004-05)		Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000417 (2004-03)		Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000429 (2004-01-15)		Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000593 (2003)		Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000705 (2002-12)		Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
000709 (2002-11)		Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000749 (2002-05)		Growth of GaInNAs quaternaries using a digital alloy technique
000890 (2001-08)		Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000894 (2001-07)		Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates
000914 (2001-03)		Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
000943 (2001)		Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs
000A19 (2001)		1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers
000A96 (2000-04)		Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
000B43 (2000)		Spin-polarized electron transport and emission from strained superlattices
000C15 (1999-12-15)		Optical anisotropy in vertically coupled quantum dots
000C30 (1999-11)		X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots
000C34 (1999-10-18)		Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
000C56 (1999-09)		Heteroepitaxial growth of InAs on Si: a new type of quantum dot

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List of associated KwdEn.i

Nombre de documents	Descripteur
68	Experimental study
61	Gallium arsenides
46	Indium compounds
38	III-V semiconductors
37	Photoluminescence
32	Semiconductor quantum dots
31	Molecular beam epitaxy
25	Indium arsenides
18	Quantum dots
14	Semiconductor lasers
12	Quantum well lasers
12	Semiconductor growth
11	Ternary compounds
10	Theoretical study
9	Aluminium compounds
9	Binary compounds
8	Interface states
8	TEM
7	Current density
7	Localized states
7	Semiconductor materials
7	Semiconductor quantum wells
6	Aluminium arsenides
6	Excitons
6	Heterostructures
6	Threshold current
5	Injection laser
5	Island structure
4	Band structure
4	Energy gap
4	Nitrogen compounds
4	Quaternary compounds
4	Self organization
4	Semiconductor epitaxial layers
4	Temperature dependence
4	XRD
3	Crystal growth from vapors
3	DLTS
3	Gallium compounds
3	Ground states
3	Monolayers
3	Optical properties
3	Semiconductor heterojunctions
3	Strains
3	Transmission electron microscopy
2	Arsenic compounds
2	Crystal structure
2	Electroluminescence
2	Electron-hole recombination
2	Electronic structure
2	Energy-level transitions
2	Epitaxy
2	Excited states
2	Gallium nitrides
2	Heteroepitaxy
2	Heterojunctions
2	Indium nitrides
2	Interface structure
2	Laser diodes
2	Laser mirrors
2	Lattice parameters
2	Nanostructured materials
2	Optical pumping
2	Optimization
2	Quantum dot
2	Quantum efficiency
2	Quantum interference phenomena
2	Quantum wires
2	RHEED
2	Semiconductor laser arrays
2	Semiconductor superlattices
2	Superlattices
2	Thermal stability
2	Thickness
2	Valence bands
2	Visible spectra
2	Waveguide lasers
1	Aluminium compound
1	Amplitudes
1	Annealing
1	Arsenic compound
1	Band offset
1	Band splitting
1	Binary compound
1	Binding energy
1	CV characteristic
1	CW lasers
1	Cathodoluminescence
1	Characterization
1	Chemical beam epitaxy
1	Chemical composition
1	Chemisorption
1	Cluster evolution
1	Composite materials
1	Conduction bands
1	Crystal defects
1	Crystal microstructure
1	Crystal morphology
1	Crystal orientation
1	Deep energy levels

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