Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Sakharov »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
A. V. Pronin < A. V. Sakharov < A. V. Sannikov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]
Ident.Authors (with country if any)Title
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000074 (2011) MOVPE of device-oriented wide-band-gap III-N heterostructures
000209 (2008) Energy characteristics of excitons in InGaN/GaN heterostructures
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000275 (2007) Analysis of the local indium composition in ultrathin InGaN layers
000295 (2006) Resonant Raman scattering in InGaN alloys
000366 (2005) Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000759 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000778 (2002) lime-resolved studies of InGaN/GaN quantum dots
000809 (2002) Mosaicity and electrical and optical properties of group III nitrides
000895 (2001-07) 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
000979 (2001) Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
000985 (2001) InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
000988 (2001) Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
000A09 (2001) Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
000A16 (2001) 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
000A17 (2001) 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices

List of associated KwdEn.i

Nombre de
documents
Descripteur
22Experimental study
21Photoluminescence
15Gallium arsenides
12III-V semiconductors
12Indium compounds
12Indium nitrides
10Gallium nitrides
10Ternary compounds
9Binary compounds
8Electroluminescence
8Indium arsenides
8Quantum dots
8Semiconductor lasers
7Semiconductor quantum dots
6Molecular beam epitaxy
5Gallium compounds
5MOCVD
5Semiconductor materials
4Surface emitting lasers
4Threshold current
4Transmission electron microscopy
3Aluminium compounds
3Aluminium nitrides
3Binary compound
3Chemical composition
3Energy gap
3Excitation spectrum
3Ground states
3Microcavity
3Nanostructured materials
3Optical properties
3Quantum dot
3Quantum wells
3Quantum yield
3Semiconductor growth
3TEM
3Temperature dependence
3Theoretical study
3Wide band gap semiconductors
2CVD
2Charge carrier trapping
2Composition effect
2Current density
2Doping
2Effective mass
2Electronic density of states
2Excitons
2Fabrication property relation
2Gallium nitride
2Growth mechanism
2Heterojunctions
2Hexagonal lattices
2III-V compound
2Indium nitride
2Injection laser
2Interband transitions
2Island structure
2Light emitting diode
2Light emitting diodes
2Localized states
2Microelectronic fabrication
2Optical pumping
2Optoelectronic devices
2Performance evaluation
2Property structure relationship
2Quantum well lasers
2Raman spectra
2Self organization
2Semiconductor heterojunctions
2Semiconductor quantum wells
2Superlattices
2Temperature effects
2Ternary compound
2Ultrathin films
2Vertical cavity laser
1Absorption edge
1Absorption spectra
1Acceptor center
1Aluminium arsenides
1Aluminium nitride
1Annealing
1Antimony compounds
1Bowing parameter
1Bragg reflection
1Buffer layer
1Burstein Moss effect
1Cadmium selenides
1Capacitance
1Carrier density
1Cathodoluminescence
1Cavity resonator
1Characterization
1Charge carrier recombination
1Charge carriers
1Coalescence
1Confinement
1Crystal growth from vapors
1Crystal microstructure
1Crystal morphology
1Defect structure

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "A. V. Sakharov" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "A. V. Sakharov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    A. V. Sakharov
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024