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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Petrovskii »
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A. V. Petinova < A. V. Petrovskii < A. V. Petrovsky  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000382 (2005) Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Heterostructures
5Semiconductor lasers
4Laser diodes
4Quantum well lasers
4Ternary compounds
3Experimental study
3Quantum wells
2Aluminium arsenides
2Binary compounds
2Gallium Arsenides
2Gallium arsenides
2Indium Arsenides
2Indium arsenides
2MOCVD
2Output power
2Single mode laser
2Strained quantum well
1AES
1Active region
1Aluminium Arsenides
1Aluminium Gallium Arsenides
1Barrier layer
1Beam profiles
1Carbon
1Carbon tetrachloride
1Divergences
1Doping profiles
1Emission spectra
1Energy levels
1High-power lasers
1IV characteristic
1Indium Gallium Arsenides
1Infrared laser
1Inorganic compounds
1Luminescence
1Luminous intensity current characteristic
1MOVPE method
1Mechanical stress
1Misfit dislocations
1Optical losses
1Optical properties
1VPE
1p n junctions

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