Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Pakhomov »
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A. V. Ovchinnikov < A. V. Pakhomov < A. V. Pashuk  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001873 (1990) The effect of hydrogen on bulk and surface traps in indium antimonide
001952 (1989) The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001979 (1989) Charge state and hydrogen levels position in different III-V materials
001A06 (1989)
001A07 (1989)
001B01 (1988)

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Donor center
6Experimental study
6Hydrogen
6Inorganic compound
6Semiconductor materials
5Passivation
4Indium Phosphides
3Acceptor center
3Gallium Indium Arsenides Mixed
3N type conductivity
2Complex defect
2Doping
2Electrical conductivity
2Electrical properties
2Manganese
2P type conductivity
2Photoluminescence
2Voltage current curve
1Atoms
1Charge carrier concentration
1Charge carrier mobility
1Charge carrier recombination
1Controlled atmosphere
1Conversion
1Crystal defect
1Crystal defect interaction
1Deep level
1Defect level
1Diffusion
1Electrical activity
1Electron density
1Electronic transition
1Epitaxial film
1Gallium Indium Arsenides phosphides Mixed
1Hydrogenation
1III-V compound
1Impurity
1Impurity level
1Indium Antimonides
1Low temperature
1MIS capacity
1MIS structure
1Medium temperature
1Non radiative recombination
1Purification
1Schottky barrier diode
1Secondary ion mass spectrometry
1Shallow level
1Single crystal
1Surface electron state
1Temperature
1Thermal stability
1Thick film
1Transition metal Compounds
1Voltage capacity curve

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